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PDF NTP5864N Data sheet ( Hoja de datos )
| Número de pieza | NTP5864N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTP5864N
Power MOSFET
60 V, 63 A, 12.4 mW
Features
• Low RDS(on)
• High Current Capability
• Avalanche Energy Specified
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage −
Non−Repetitive (tp = 10 ms)
Continuous Drain
Steady TC = 25°C
Current − RqJC (Note 1) State TC = 100°C
Power Dissipation −
RqJC (Note 1)
Steady TC = 25°C
State TC = 100°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (L = 0.1 mH)
VDSS
VGS
VGS
ID
PD
IDM
TJ,
TSTG
IS
EAS
IAS
60
±20
±30
63
45
107
54
252
−55 to
175
63
80
40
V
V
V
A
W
A
°C
A
mJ
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction−to−Case (Drain) − Steady State
(Note 1)
RθJC
1.4 °C/W
Junction−to−Ambient − Steady State (Note 1)
RθJA
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
33 °C/W
www.onsemi.com
V(BR)DSS
60 V
RDS(ON) MAX
12.4 mΩ @ 10 V
ID MAX
(Note 1)
63 A
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4 Drain
TO−220AB
CASE 221A
STYLE 5
NTP5864NG
AYWW
1
2
3
A
Y
WW
G
1
Gate
= Assembly Location
= Year
= Work Week
= Pb−Free Package
2
Drain
3
Source
ORDERING INFORMATION
Device
Package
Shipping
NTP5864NG
TO−220
(Pb−Free)
50 Units / Rail
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 1
1
Publication Order Number:
NTP5864N/D
1 page  
NTP5864N
TYPICAL CHARACTERISTICS
10
1 Duty Cycle = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
www.onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTP5864N.PDF ] | |
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