NTMD6P02 PDF даташит
Спецификация NTMD6P02 изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NTMD6P02 |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NTMD6P02, NVMD6P02
Power MOSFET
6 A, 20 V, P−Channel SOIC−8, Dual
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual SOIC−8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• These Devices are Pb−Free and are RoHS Compliant
• NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
www.onsemi.com
6 AMPERES, 20 VOLTS
P−Channel
D
Applications
• Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
G
MAXIMUM RATINGS
Rating
Symbol Value Unit
S
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C (VDD = −20 Vdc,
VGS = −5.0 Vdc, Peak IL = −5.0 Apk,
L = 40 mH, RG = 25 W)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
VDSS
VGS
−20
"12
V
V
RqJA
PD
ID
ID
PD
ID
IDM
62.5
2.0
−7.8
−5.7
0.5
−3.89
−40
°C/W
W
A
A
W
A
A
RqJA
PD
ID
ID
PD
ID
IDM
98
1.28
−6.2
−4.6
0.3
−3.01
−35
°C/W
W
A
A
W
A
A
RqJA
PD
ID
ID
PD
ID
IDM
TJ, Tstg
EAS
166
0.75
−4.8
−3.5
0.2
−2.48
−30
−55 to
+150
500
°C/W
W
A
A
W
A
A
°C
mJ
TL 260 °C
8
1
SOIC−8
CASE 751
STYLE 11
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 D1 D2 D2
8
E6P02
AYWW G
G
1
S1 G1 S2 G2
E6P02 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMD6P02R2G SOIC−8 2500 / Tape & Reel
(Pb−Free)
NVMD6P02R2G SOIC−8 2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = 10 seconds.
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = steady state.
3. Minimum FR−4 or G−10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 5
1
Publication Order Number:
NTMD6P02R2/D
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NTMD6P02, NVMD6P02
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)*
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 25°C)
(VDS = −20 Vdc, VGS = 0 Vdc, TJ = 70°C)
Gate−Body Leakage Current
(VGS = −12 Vdc, VDS = 0 Vdc)
Gate−Body Leakage Current
(VGS = +12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = −250 mAdc)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(VGS = −4.5 Vdc, ID = −6.2 Adc)
(VGS = −2.5 Vdc, ID = −5.0 Adc)
(VGS = −2.5 Vdc, ID = −3.1 Adc)
Forward Transconductance (VDS = −10 Vdc, ID = −6.2 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = −16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 5 and 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −10 Vdc, ID = −1.0 Adc,
VGS = −10 Vdc,
RG = 6.0 W)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −16 Vdc, ID = −6.2 Adc,
VGS = −4.5 Vdc,
RG = 6.0 W)
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = −16 Vdc,
VGS = −4.5 Vdc,
ID = −6.2 Adc)
BODY−DRAIN DIODE RATINGS (Note 5)
Diode Forward On−Voltage
(IS = −1.7 Adc, VGS = 0 Vdc)
(IS = −1.7 Adc, VGS = 0 Vdc, TJ = 125°C)
Diode Forward On−Voltage
(IS = −6.2 Adc, VGS = 0 Vdc)
(IS = −6.2 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = −1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
5. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
6. Switching characteristics are independent of operating junction temperature.
*Handling precautions to protect against electrostatic discharge are mandatory.
Symbol
V(BR)DSS
IDSS
IGSS
IGSS
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qtot
Qgs
Qgd
VSD
VSD
trr
ta
tr
QRR
Min
−20
−
−
−
−
−
−0.6
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ Max Unit
−
−11.6
−
−
−
−
−
−
−1.0
−5.0
−100
100
Vdc
mV/°C
mAdc
nAdc
nAdc
−0.88
2.6
0.027
0.038
0.038
15
−1.20
−
0.033
0.050
−
−
Vdc
mV/°C
W
Mhos
1380
515
250
1700
775
450
pF
15 25 ns
20 50
85 125
50 110
17 − ns
65 −
50 −
80 −
20 35 nC
4.0 −
8.0 −
−0.80 −1.2 Vdc
−0.65
−
−0.95 − Vdc
−0.80
−
50 80 ns
20 −
30 −
0.04 − mC
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NTMD6P02, NVMD6P02
12
−10 V
10
8.0
6.0
4.0
−4.5 V
−3.8 V
−2.1 V
−3.1 V
−2.5 V
TJ = 25°C
−1.8 V
2.0
0
0
−1.5 V
VGS = −1.3 V
0.25 0.50 0.75 1.00 1.25 1.50 1.75
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
10
VDS ≥ −10 V
8.0
6.0
25°C
4.0
100°C
2.0 TJ = −55°C
0
0 1.0 1.5 2.0 2.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.05
0.04
0.03
0.02
0.01
ID = −6.2 A
TJ = 25°C
0.05
0.04
TJ = 25°C
0.03
0.02
VGS = −2.5 V
−2.7 V
−4.5 V
0
0 2.0 4.0 6.0 8.0 10
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
0.01
0
2.0 4.0 6.0 8.0 10 12
−ID, DRAIN CURRENT (AMPS)
14
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
1.6
1.4
ID = −6.2 A
VGS = −4.5 V
1.2
1000
VGS = 0 V
100
10
TJ = 125°C
100°C
11
25°C
0.8 0.1
0.6
−50 −25 0 25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
Figure 5. On−Resistance Variation with
Temperature
0.01
4
8 12 16 20
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage Current
versus Voltage
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