|
|
PDF NTMFS4854NS Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4854NS | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTMFS4854NS (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
NTMFS4854NS
SENSEFET® Power MOSFET
25 V, 149 A, Single N−Channel, SO−8 FL
Features
• Accurate, Lossless Current Sensing
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
VDSS
25
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 85°C
VGS
ID
±16
24.4
17.6
Unit
V
V
A
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.31 W
Continuous Drain
C(Nuortreen2t)RqJA
Power Dissipation
RqJA (Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
15.2 A
11
0.9 W
Continuous Drain
C(Nuortreen1t)RqJC
TC = 25°C
ID
149 A
TC = 85°C
107.5
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain
Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage
Temperature
PD
IDM
TJ, TSTG
86.2
298
−55 to
+150
W
A
°C
Source Current (Body Diode)
Drain to Source DV/DT
IS
dV/dt
71 A
6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 20 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
200 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
25 V
RDS(ON) MAX
2.5 mW @ 10 V
3.9 mW @ 4.5 V
DRAIN
ID MAX
149 A
119 A
GATE
Kelvin
SENSE SOURCE
1
SO−8 FLAT LEAD
CASE 506BQ
MARKING
DIAGRAM
D (Do Not Connect)
S NC
S 4854NS SENSE
S AYWZZ KELVIN
G K1
D (Do Not Connect)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4854NST1G SO−8 FL 1500 Tape / Reel
(Pb−Free)
NTMFS4854NST3G SO−8 FL 5000 Tape / Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 1
1
Publication Order Number:
NTMFS4854NS/D
1 page  
NTMFS4854NS
TYPICAL PERFORMANCE CURVES
6000
5000
4000
Ciss
VGS = 0 V
TJ = 25°C
12
10
QT 20
15
8 VDS
VGS
3000
2000
1000
Coss
Crss
0
0 5 10 15 20
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
6 10
4 Qgs
Qgd
5
2 ID = 30 A
0 TJ = 25°C 0
25 0 10 20 30 40 50 60 70 80 90
QG, TOTAL GATE CHARGE (nC)
Figure 7. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
1000
VGS = 11.5 V
VDD = 15 V
ID = 15 A
100
td(off)
tf
tr
td(on)
100
VGS = 0 V
TJ = 25°C
10
10 1.0
1
1
1000
10
RG, GATE RESISTANCE (W)
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
100
100 10 ms
VGS = 20 V
10
SINGLE PULSE
TC = 25°C
100 ms
1 ms
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
10 ms
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
0.1
0.3
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage vs. Current
ID = 250 mA
VGS = VDS
1.0
0.5
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Threshold Voltage
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTMFS4854NS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTMFS4854NS | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |