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NTMFS4854NS Datasheet Download - ON Semiconductor

Номер произв NTMFS4854NS
Описание Power MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTMFS4854NS Даташит, Описание, Даташиты
NTMFS4854NS
SENSEFET® Power MOSFET
25 V, 149 A, Single NChannel, SO8 FL
Features
Accurate, Lossless Current Sensing
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
CPU Power Delivery
DCDC Converters
Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
DraintoSource Voltage
VDSS
25
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 85°C
VGS
ID
±16
24.4
17.6
Unit
V
V
A
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.31 W
Continuous Drain
C(Nuortreen2t)RqJA
Power Dissipation
RqJA (Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
15.2 A
11
0.9 W
Continuous Drain
C(Nuortreen1t)RqJC
TC = 25°C
ID
149 A
TC = 85°C
107.5
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain
Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage
Temperature
PD
IDM
TJ, TSTG
86.2
298
55 to
+150
W
A
°C
Source Current (Body Diode)
Drain to Source DV/DT
IS
dV/dt
71 A
6 V/ns
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 20 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
200 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
25 V
RDS(ON) MAX
2.5 mW @ 10 V
3.9 mW @ 4.5 V
DRAIN
ID MAX
149 A
119 A
GATE
Kelvin
SENSE SOURCE
1
SO8 FLAT LEAD
CASE 506BQ
MARKING
DIAGRAM
D (Do Not Connect)
S NC
S 4854NS SENSE
S AYWZZ KELVIN
G K1
D (Do Not Connect)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping
NTMFS4854NST1G SO8 FL 1500 Tape / Reel
(PbFree)
NTMFS4854NST3G SO8 FL 5000 Tape / Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 Rev. 1
1
Publication Order Number:
NTMFS4854NS/D







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NTMFS4854NS Даташит, Описание, Даташиты
NTMFS4854NS
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
JunctiontoCase (Drain)
RqJC
JunctiontoAmbient – Steady State (Note 3)
RqJA
JunctiontoAmbient – Steady State (Note )
RqJA
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
Value
1.45
54
138.7
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BRT)JDSS/
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 20 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±16 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 15 A
VGS = 4.5 V
ID = 15 A
VGS = 3.2 V,
ID = 10 A
TJ = 75°C
TJ = 25°C
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 11ID.5=V,3V0DAS = 15 V;
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. With 0V potential from sense lead to source lead, i.e. using a virtual ground.
Min
25
1.0
Typ Max Unit
V
30 mV/°C
10
200
±100
mA
nA
2.5 V
6.8 mV/°C
1.5 2.5
2.5 3.9
6.0 10
mW
5.1 8.8
28 S
4830
1130
550
36
4.7
13
15
85
66
pF
nC
nC
20
54
38 ns
45
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NTMFS4854NS Даташит, Описание, Даташиты
NTMFS4854NS
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
DRAINSOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
11
32
54
34
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS
=
0
V, dIS/dt
IS = 30
=
A
100
A/ms,
0.80 1.2
0.65
36
17
19
33
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
CURRENT SENSE CHARACTERISTICS
LS
LD
LG
RG
TA = 25°C
0.65
0.005
1.84
1.4
Current Sensing Ratio
Current Sensing Ratio
Current Sense Temperature Coefficient
(Note 7)
Iratio
VGS = 5 V, 0-70°C, 5-20 A
374 399
424
Iratio
VGS = 5 V, 0-70°C, 15 A
362 399
436
0.006
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. With 0V potential from sense lead to source lead, i.e. using a virtual ground.
Unit
ns
V
ns
nC
nH
nH
nH
W
%/°C
http://onsemi.com
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