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NTP5863N Datasheet Download - ON Semiconductor

Номер произв NTP5863N
Описание N-Channel Power MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTP5863N Даташит, Описание, Даташиты
NTP5863N
N-Channel Power MOSFET
60 V, 97 A, 7.8 mW
Features
Low RDS(on)
High Current Capability
100% Avalanche Tested
These Devices are PbFree, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage Continuous
GatetoSource Voltage Nonrepetitive
(TP < 10 ms)
Continuous Drain
Current
Steady
State
TC = 25°C
TC = 100°C
Power Dissipation
Steady TC = 25°C
State
VDSS
VGS
VGS
ID
PD
60
$20
30
97
68
150
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
IDM
TJ, Tstg
383
55 to
+175
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy (L = 0.1 mH, IL(pk) = 56 A)
Peak Diode Recovery (dV/dt)
IS
EAS
dV/dt
97
157
4.1
Lead Temperature for Soldering
Purposes (1/8from Case for 10 Seconds)
TL 260
Unit
V
V
V
A
W
A
°C
A
mJ
V/ns
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
JunctiontoCase (Drain) Steady State
RqJC
1.0 °C/W
JunctiontoAmbient Steady State (Note 1)
RqJA
36
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
7.8 mW @ 10 V
ID MAX
97 A
D
G
S
NCHANNEL MOSFET
4
12
3
TO220AB
CASE 221A
STYLE 5
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
NTP
5863NG
AYWW
1
Gate
3
Source
2
Drain
G = PbFree Device
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
July, 2011 Rev. 2
1
Publication Order Number:
NTP5863N/D







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NTP5863N Даташит, Описание, Даташиты
NTP5863N
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VDS = 0 V, ID = 250 mA
ID = 250 mA, ref to 25°C
60
47
V
mV/°C
Zero Gate Voltage Drain Current
GateBody Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = $20 V
1.0
50
$100
mA
nA
Gate Threshold Voltage
VGS(th)
Negative Threshold Temperature Coefficient
VGS(th)/TJ
DraintoSource OnResistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 20 A
VDS = 15 V, ID = 30 A
2.0 4.0 V
9.1 mV/°C
6.5 7.8 mW
12 S
Input Capacitance
Ciss
Output Capacitance
Coss
Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VDS
=
25
f=
1V,MVHGzS
=
0
V,
VGS = 10 V, VDS = 48 V,
ID = 48 A
VGS = 10 V, VDD = 48 V,
ID = 48 A, RG = 2.5 W
3200
350
230
55
3.4
14.5
19
0.4
10
34
25
9.0
pF
nC
W
ns
Forward Diode Voltage
VSD
VGS = 0 V
TJ = 25°C
IS = 48 A
TJ = 150°C
Reverse Recovery Time
trr
Charge Time
Discharge Time
ta VGS = 0 Vdc, IS = 48 Adc,
tb dIS/dt = 100 A/ms
Reverse Recovery Stored Charge
QRR
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
0.96 1.5
0.85
32
20
12
28
Vdc
ns
nC
http://onsemi.com
2







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NTP5863N Даташит, Описание, Даташиты
NTP5863N
TYPICAL PERFORMANCE CHARACTERISTICS
200
175
150
125
100
75
50
25
0
0
10 V
7.5 V
7.0 V
TJ = 25°C
VGS = 6.5 V
5.5 V
5.0 V
4.5 V
123 4
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
5
200
175 VDS 10 V
150
125
100
75
50 TJ = 25°C
25
0
2
TJ = 125°C
34
TJ = 55°C
5
6
VGS, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
7
0.030
0.025
0.020
ID = 20 A
TJ = 25°C
0.0080
TJ = 25°C
0.0075
0.015
0.010
0.005
0.0070
0.0065
VGS = 10 V
0.000
4 56789
VGS, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. Gate Voltage
2.2
2.0
ID = 20 A
VGS = 10 V
1.8
1.6
0.0060
10 10 20 30 40 50 60 70 80 90 100
ID, DRAIN CURRENT (A)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
100,000
VGS = 0 V
10,000
TJ = 150°C
1.4
1.2
1000
TJ = 25°C
1.0
0.8
0.6
50
25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
175
100
10 20 30 40 50 60
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 6. DraintoSource Leakage Current
vs. Voltage
http://onsemi.com
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