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NTMFS4933N Datasheet Download - ON Semiconductor

Номер произв NTMFS4933N
Описание Power MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTMFS4933N Даташит, Описание, Даташиты
NTMFS4933N
Power MOSFET
30 V, 210 A, Single NChannel, SO8 FL
Features
Low RDS(on) to Improve Conduction and Overall Efficiency
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
ORing FET, Power Load Switch, Motor Control
Refer to Application Note AND8195/D for Mounting Information
End Products
Server, UPS, FaultTolerant Power Systems, Hot Swap
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 100°C
VDSS
VGS
ID
30
±20
34
21.5
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
2.74 W
43 A
27
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 100°C
PD
ID
7.3 W
20 A
12.5
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC =100°C
PD
ID
1.06 W
210 A
132
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
PD
IDM
104 W
400 A
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 58 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TJ,
TSTG
IS
dV/dt
EAS
55 to
+150
95
4.4
504
°C
A
V/ns
mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
(Cu area = 50 mm2 [1 oz])
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
1.2 mW @ 10 V
2.0 mW @ 4.5 V
D (5,6)
ID MAX
210 A
G (4)
S (1,2,3)
NCHANNEL MOSFET
MARKING
DIAGRAM
1
SO8 FLAT LEAD
CASE 488AA
STYLE 1
D
S
S
S
4933N
AYWZZ
D
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4933NT1G
Package
SO8 FL
(PbFree)
Shipping
1500 /
Tape & Reel
NTMFS4933NT3G SO8 FL
(PbFree)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 Rev. 8
1
Publication Order Number:
NTMFS4933N/D







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NTMFS4933N Даташит, Описание, Даташиты
NTMFS4933N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
JunctiontoCase (Drain)
RqJC
JunctiontoAmbient – Steady State (Note 3)
RqJA
JunctiontoAmbient – Steady State (Note 4)
RqJA
JunctiontoAmbient – (t 10 s) (Note 3)
RqJA
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size. (Cu area = 50 mm2 [1 oz])
Value
1.1
45.6
117.5
17.13
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/
TJ
VGS = 0 V, ID = 250 mA
30
15
V
mV/°C
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
1.0
10
±100
mA
nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
1.2 1.6
4.0
VGS = 10 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 1.5 V, ID = 15 A
0.9
0.9
1.5
1.5
82
2.2 V
mV/°C
1.2
2.0 mW
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 6)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V; ID = 30 A
10930
3230
92
62.1
15.7
27
10.1
148
pF
nC
nC
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
31
33
47 ns
23
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NTMFS4933N Даташит, Описание, Даташиты
NTMFS4933N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
DRAINSOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
20
26
88.6
22
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS
=
0
V, dIS/dt
IS = 30
=
A
100
A/ms,
0.82 1.1
0.68
73.5
35.9
37.6
117
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
0.50
0.005
1.84
1.1
2.2
Unit
ns
V
ns
nC
nH
nH
nH
W
http://onsemi.com
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