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NVB5405N Datasheet Download - ON Semiconductor

Номер произв NVB5405N
Описание Power MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVB5405N Даташит, Описание, Даташиты
NTB5405N, NVB5405N
Power MOSFET
40 V, 116 A, Single N−Channel, D2PAK
Features
Low RDS(on)
High Current Capability
Low Gate Charge
AEC−Q101 Qualified and PPAP Capable − NVB5405N
These Devices are Pb−Free and are RoHS Compliant
Applications
Electronic Brake Systems
Electronic Power Steering
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current − RqJC
Power Dissipation −
RqJC
Steady
State
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
Continuous Drain
Current − RqJA (Note 1)
Power Dissipation −
RqJA (Note 1)
Steady
State
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
ID
PD
IDM
TJ,
TSTG
40
±20
116
82
150
16.5
11.6
3.0
280
−55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode) Pulsed
Single Pulse Drain−to Source Avalanche
Energy − (VDD = 50 V, VGS = 10 V, IPK = 40 A,
L = 1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS
EAS
TL
75 A
800 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain)
RθJC
Junction−to−Ambient (Note 1)
RθJA
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1.0 °C/W
50 °C/W
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V(BR)DSS
40 V
RDS(ON) TYP
4.9 mΩ @ 10 V
ID MAX
(Note 1)
116 A
N−Channel
D
G
S
MARKING
DIAGRAM
12
3
D2PAK
CASE 418B
STYLE 2
NTB5405NG
AYWW
1
NTB5405N
G
A
Y
WW
= Specific Device Code
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NTB5405NG
NTB5405NT4G
NVB5405NT4G
Package
D2PAK
(Pb−Free)
D2PAK
(Pb−Free)
D2PAK
(Pb−Free)
Shipping
50 Units / Rail
800 / Tape & Reel
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 5
1
Publication Order Number:
NTB5405N/D







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NVB5405N Даташит, Описание, Даташиты
NTB5405N, NVB5405N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 100°C
VDS = 0 V, VGS = ±30 V
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V, ID = 40 A
VGS = 5.0 V, ID = 15 A
VGS = 10 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1.0 MHz,
VDS = 32 V
Total Gate Charge
QG(TOT)
Threshold Gate Charge
Gate−to−Source Charge
QG(TH)
QGS
VGS = 10 V, VDS = 32 V,
ID = 40 A
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 10 V, VDD = 32 V,
ID = 40 A, RG = 2.5 W
Fall Time
tf
SWITCHING CHARACTERISTICS, VGS = 5 V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 5 V, VDD = 20 V,
ID = 20 A, RG = 2.5 W
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 20 A
TJ = 100°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dISD/dt = 100 A/ms,
tb IS = 20 A
Reverse Recovery Charge
QRR
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
40
1.5
Typ
39
−7.0
4.9
7.0
32
2700
700
300
88
3.25
9.5
37
8.5
52
55
70
19
153
32
42
0.82
TBD
66
35
31
113
Max Unit
1.0
10
±100
V
mV/°C
mA
nA
3.5 V
mV/°C
5.8 mW
8.0
S
4000
1400
600
pF
nC
ns
ns
1.1 V
ns
nC
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NVB5405N Даташит, Описание, Даташиты
NTB5405N, NVB5405N
TYPICAL PERFORMANCE CURVES
200
175
150
125
100
75
50
25
0
0
VGS = 6 V to 10 V
TJ = 25°C
5.5 V
5V
4.5 V
4V
3.5 V
1 23 45 67 89
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
10
125
VDS 10 V
100
75
50
TJ = 125°C
25 TJ = 25°C
TJ = −55°C
0
01 2 3 4 5 6 78
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.01
0.009
0.008
ID = 40 A
TJ = 25°C
0.007
0.006
0.005
0.004
0.003
345 6789
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
10
0.01
0.009
TJ = 25°C
0.008
0.007
0.006
VGS = 5 V
0.005
0.004
VGS = 10 V
0.003
0.002
15 25 35 45 55 65 75 85 95 105 115
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2
ID = 40 A
1.8 VGS = 10 V
1.6
100000
VGS = 0 V
10000
TJ = 175°C
1.4
1000
1.2
1
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100 TJ = 100°C
10
10 15 20 25 30 35 40
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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