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PDF BSC152N10NSFG Data sheet ( Hoja de datos )
| Número de pieza | BSC152N10NSFG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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OptiMOS®2 Power-Transistor
Features
• Very low gate charge for high frequency applications
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
BSC152N10NSF G
Product Summary
V DS
R DS(on),max
ID
100 V
15.2 mΩ
63 A
PG-TDSON-8
Type
BSC152N10NSF G
Package
PG-TDSON-8
Marking
152N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
T A=25 °C,
R thJA=50 K/W2)
Pulsed drain current3)
Avalanche energy, single pulse
Gate source voltage
I D,pulse
E AS
V GS
T C=25 °C
I D=50 A, R GS=25 Ω
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
63
40
9.4
252
155
±20
114
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.06
page 1
2008-10-20
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
80
10 V
7V
60
6V
BSC152N10NSF G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
30
5V
25
5.5 V
20 6 V
40 15 7 V
5.5 V
20
5V
10 V
10
5
4.5 V
0
012345
V DS [V]
0
0 20 40 60
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
120
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
80
80
40
0
0
Rev. 2.06
150 °C
25 °C
246
V GS [V]
60
40
20
0
80
page 5
20 40 60 80 100
I D [A]
2008-10-20
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BSC152N10NSFG.PDF ] | |
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