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C2995 Datasheet Download - Toshiba Semiconductor

Номер произв C2995
Описание 2SC2995
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 



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C2995 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2995
FM/AM RF, MIX, OSC, IF
High Frequency Amplifier Applications
2SC2995
Unit: mm
· High stability oscillation voltage on FM local oscillator.
· Recommend FM/AM RF, MIX, OSC and IF.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
40
30
4
50
10
200
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse transfer capacitance
Transition frequency
Collector-base time constant
Noise figure
Power gain
Oscillation output voltage
ICBO
VCB = 40 V, IE = 0
IEBO
VEB = 4 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 1 mA
Cre
fT
Ccrbb’
NF
Gpe
VOSC
VCE = 6 V, f = 1 MHz
VCE = 6 V, IE = -1 mA
VCB = 6 V, IE = -1 mA, f = 30 MHz
VCC = 6 V, IE = -1 mA, f = 100 MHz
(Figure 1)
VCC = 6 V, f = 100 MHz (Figure 2)
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 0.5 mA
40 ¾ 240
¾ 0.9 1.3 pF
150 350 ¾ MHz
¾ 15 30 ps
¾ 4.0 ¾ dB
¾ 15 ¾ dB
¾ 150 ¾ mV
1 2003-03-19







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C2995 Даташит, Описание, Даташиты
2SC2995
L1: 0.8 mmf silver plated copper wire, 4 T, 10ID, 8 length
Figure 1 NF, Gpe Test Circuit
L1: 0.8 mmf silver plated copper wire, 4 T, 10ID, 8 length
Figure 2 VOSC Test Circuit
2 2003-03-19







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C2995 Даташит, Описание, Даташиты
2SC2995
3 2003-03-19










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