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Número de pieza | IRFPS29N60LPbF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! SMPS MOSFET
PD - 95907
IRFPS29N60LPbF
Applications
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
• Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 175mΩ 130ns 29A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise immunity.
Super-247™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
29
18
110
480
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
3.8
±30
15
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
IS
Parameter
Continuous Source Current
Min. Typ. Max. Units Conditions
––– ––– 29
MOSFET symbol
(Body Diode)
A showing the
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 110
––– ––– 1.5
integral reverse
fp-n junction diode.
V TJ = 25°C, IS = 29A, VGS = 0V
ftrr Reverse Recovery Time
––– 130 190 ns TJ = 25°C, IF = 29A
––– 240 360
TJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 630 950 nC TJ = 25°C, IS = 29A, VGS = 0V
f––– 1820 2720
TJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 9.4 14 A TJ = 25°C
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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1
09/15/04
1 page IRFPS29N60LPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
1
10
100
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
30
25
20
15
10
5
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 10. Maximum Drain Current vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 11a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11b. Switching Time Waveforms
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5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRFPS29N60LPbF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFPS29N60LPbF | Power MOSFET ( Transistor ) | International Rectifier |
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