IRFZ46L PDF даташит
Спецификация IRFZ46L изготовлена «International Rectifier» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | IRFZ46L |
Описание | Power MOSFET ( Transistor ) |
Производители | International Rectifier |
логотип |
10 Pages
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l Advanced Process Technology
l Surface Mount (IRFZ46S)
l Low-profile through-hole (IRFZ46L)
l 175°C Operating Temperature
l Fast Switching
G
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ46L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
EAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 9.922A
IRFZ46S/L
HEXFET® Power MOSFET
D VDSS = 50V
RDS(on) = 0.024Ω
ID = 72A
S
D 2 Pak
T O -262
Max.
50
38
220
3.7
150
1.0
± 20
100
4.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
V/ns
°C
°C
Typ.
–––
–––
Max.
1.0
40
Units
°C/W
8/25/97
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IRFZ46S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
50 ––– –––
––– 0.057 –––
––– ––– 0.024
2.0 ––– 4.0
27 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 66
––– ––– 21
––– ––– 25
––– 12 –––
––– 120 –––
––– 42 –––
––– 96 –––
––– 7.5 –––
––– 1800 –––
––– 960 –––
––– 160 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID =1mA
VGS =10V, ID = 32A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 32A
VDS = 50V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 54A
VDS = 48V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 54A
RG = 9.1Ω
RD = 0.49Ω, See Fig. 10
Between lead,
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 50
––– ––– 220
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 2.5 V TJ = 25°C, IS = 54A, VGS = 0V
––– 66 99 ns TJ = 25°C, IF = 54A
––– 170 310 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 34µH
RG = 25Ω, IAS = 54A. (See Figure 12)
ISD ≤ 54A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFZ46 data and test conditions
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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IRFZ46S/L
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DataSheet26.com | 2020 | Контакты | Поиск |