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IRFPS29N60L PDF даташит

Спецификация IRFPS29N60L изготовлена ​​​​«Vishay» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв IRFPS29N60L
Описание Power MOSFET ( Transistor )
Производители Vishay
логотип Vishay логотип 

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IRFPS29N60L Даташит, Описание, Даташиты
IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
220
67
96
Single
D
0.175
SUPER-247TM
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
S
D
G
FEATURES
• Super Fast Body Diode Eliminates the Need
for External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Requirements
Available
RoHS*
COMPLIANT
• Enhances dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offer Improved Noise
Immunity
• Lead (Pb)-free Available
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
SUPER-247TM
IRFPS29N60LPbF
SiHFPS29N60L-E3
IRFPS29N60L
SiHFPS29N60L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.5 mH, RG = 25 Ω, IAS = 29 A (see fig.12a).
c. ISD 29 A, dI/dt 830 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91255
S-81359-Rev. A, 07-Jul-08
LIMIT
600
± 30
29
18
110
3.8
570
29
48
480
15
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
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IRFPS29N60L Даташит, Описание, Даташиты
IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambienta
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)a
RthJA
RthCS
RthJC
Note
a. Rth is measured at TJ approximately 90 °C.
TYP.
-
0.24
-
MAX.
40
-
0.26
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 30 V
VDS = 600 V, VGS = 0 V
VDS = 480 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 17 Ab
VDS = 50 V, ID = 17 Ab
600 -
-V
- 0.53 - V/°C
3.0 - 5.0 V
- - ± 100 nA
- - 50 µA
- - 2.0 mA
- 0.175 0.21 Ω
15 -
-S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Ciss
Coss
Crss
Coss eff.
Coss eff. (ER)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5b
VDS = 0 V to 480 Vc
- 6160 -
- 530 -
- 44 -
- 250 -
- 190 -
pF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
VGS = 10 V
ID = 29 A, VDS = 480 V,
see fig. 7 and 15b
-
-
-
- 220
- 67 nC
- 96
f = 1 MHz, open drain
- 0.86 -
Ω
VDD =300 V, ID = 29 A,
RG = 4.3 Ω, VGS = 10 V,
see fig. 11a and 11bb
- 34 -
- 100 -
ns
- 66 -
- 54 -
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM p - n junction diode
D
G
S
Body Diode Voltage
VSD TJ = 25 °C, IS = 29 A, VGS = 0 Vb
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
TJ = 25 °C, IF = 29 A
TJ = 125 °C, dI/dt = 100 A/µsb
- - 29
A
- - 110
- - 1.5 V
- 130 190
ns
- 240 360
- 630 950
µC
- 1820 2720
Body Diode Recovery Current
IRRM
TJ = 25 °C
-
9.4 14
A
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominatred by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS.
www.vishay.com
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Document Number: 91255
S-81359-Rev. A, 07-Jul-08









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IRFPS29N60L Даташит, Описание, Даташиты
IRFPS29N60L, SiHFPS29N60L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
100
10
TOP
BOTTOM
VGS
15V
10V
9.0V
7.0V
7.0V
5.5V
5.0V
4.5V
20μs PULSE WIDTH
Tj = 25°C
1000.00
100.00
10.00
TJ = 150°C
1 1.00 TJ = 25°C
0.1
0.01
0.1
4.5V
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
0.10
0.01
4
VDS = 50V
20μs PULSE WIDTH
6 8 10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
TOP
VGS
15V
10V
9.0V
7.0V
7.0V
5.5V
10 5.0V
BOTTOM 4.5V
4.5V
1
0.1
0.1
20μs PULSE WIDTH
Tj = 150°C
1 10 100
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
ID = 28A
2.5 VGS = 10V
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91255
S-81359-Rev. A, 07-Jul-08
www.vishay.com
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