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SBL4030PT PDF даташит

Спецификация SBL4030PT изготовлена ​​​​«Vishay» и имеет функцию, называемую «Dual Common Cathode Schottky Rectifier».

Детали детали

Номер произв SBL4030PT
Описание Dual Common Cathode Schottky Rectifier
Производители Vishay
логотип Vishay логотип 

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SBL4030PT Даташит, Описание, Даташиты
www.vishay.com
SBL4030PT, SBL4040PT
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ max.
Package
40 A
30 V, 40 V
400 A
0.50 V
125 °C
TO-247AD (TO-3P)
Diode variations
Common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
Maximum average forward rectified current at TC = 100 °C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse surge current per diode (1)
IF(AV)
IFSM
IRRM
Voltage rate of change at (rated VR)
dV/dt
Operating junction storage temperature range
TJ, TSTG
Note
(1) 2.0 μs pulse width, f = 1.0 kHz
SBL4030PT
SBL4040PT
30 40
21 28
30 40
40
400
2.0
1000
-40 to +125
UNIT
V
V
V
A
A
A
V/μs
°C
Revision: 17-Aug-15
1 Document Number: 88733
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

SBL4030PT Даташит, Описание, Даташиты
www.vishay.com
SBL4030PT, SBL4040PT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SBL4030PT
SBL4040PT
Maximum instantaneous
forward voltage per diode (1)
Maximum instantaneous
reverse current at rated DC
blocking voltage per diode (1)
IF = 20 A
TC = 25 °C
TC = 100 °C
TC = 25 °C
TC = 100 °C
TC = 25 °C
TC = 100 °C
VF
IR
0.58
0.50
10
100
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
UNIT
V
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL4030PT
SBL4040PT
Thermal resistance from junction to case per diode
RJC
1.2
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-247AD
SBL4030PT-E3/45
6.13
PACKAGE CODE
45
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
50
40
30
20
10
0
0 50 100
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
150
400
300
200
100
1
10
Number of Cycles at 60 Hz
100
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 17-Aug-15
2 Document Number: 88733
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

SBL4030PT Даташит, Описание, Даташиты
www.vishay.com
SBL4030PT, SBL4040PT
Vishay General Semiconductor
100
TJ = 100 °C
10
1
TJ = 25 °C
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
0.1
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100 100
10
TJ = 100 °C
10
1
0.1
0.01
TJ = 25 °C
1
0.001
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
0.1
0.01
0.1 1
10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.840 (21.3)
0.820 (20.8)
0.170
(4.3)
0.142 (3.6)
0.138 (3.5)
10° TYP.
Both Sides
1 23
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.117 (2.97)
0.118 (3.0)
0.108 (2.7)
0.078 (1.98) REF.
10
1° REF.
Both Sides
0.225 (5.7)
0.205 (5.2)
0.048 (1.22)
0.044 (1.12)
0.030 (0.76)
0.020 (0.51)
PIN 1
PIN 3
PIN 2
CASE
Revision: 17-Aug-15
3 Document Number: 88733
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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