HM2302B PDF даташит
Спецификация HM2302B изготовлена «H&M Semiconductor» и имеет функцию, называемую «N-Channel Trench Power MOSFET». |
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Детали детали
Номер произв | HM2302B |
Описание | N-Channel Trench Power MOSFET |
Производители | H&M Semiconductor |
логотип |
5 Pages
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N-Channel Trench Power MOSFET
General Description
The HM2302B uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
battery protection or in other switching application.
Features
● VDS = 20V,ID =2.5A
RDS(ON) < 60mΩ @ VGS =4.5V
RDS(ON) < 90mΩ @ VGS =2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● Battery protection
● Load switch
● Power management
HM2302B
Schematic Diagram
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
A2sHB
HM2302B
SOT-23
Reel Size
Ø180mm
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID
IDM (pluse)
Drain Current-Continuous
Drain Current-Continuous@ Current-Pulsed (Note 1)
PD Maximum Power Dissipation
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
Table 2. Thermal Characteristic
Symbol
Parameter
RJA
Thermal Resistance, Junction-to-Ambient
Tape width
8mm
Quantity
3000units
Value
20
±12
2.5
10
1
-55 To 150
Unit
V
V
A
A
W
℃
Value
125
Unit
℃/W
-1-
Shenzhen H&M Semiconductor Co.Ltd
http://www.hmsemi.com
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HM2302B
Table 3. Electrical Characteristics (TA=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
On/Off States
BVDSS Drain-Source Breakdown Voltage
VGS=0V ID=250μA
IDSS Zero Gate Voltage Drain Current
VDS=20V,VGS=0V
IGSS Gate-Body Leakage Current
VGS=±12V,VDS=0V
VGS(th) Gate Threshold Voltage
VDS=VGS,ID=250μA
gFS Forward Transconductance
VDS=5V,ID=2.5A
RDS(ON) Drain-Source On-State Resistance
VGS=4.5V, ID=2.5A
VGS=2.5V, ID=2A
Dynamic Characteristics
Min
20
0.5
4
Typ
22.5
0.85
46
76
Max
1
±100
1.2
60
90
Unit
V
μA
nA
V
S
mΩ
mΩ
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Times
td(on) Turn-on Delay Time
tr Turn-on Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V,VGS=0V,
f=1.0MHz
280 pF
60 pF
40 pF
6 nS
VDD=10V,ID=2.5A,RL=2.8Ω 5 nS
VGS=4.5V,RG=6Ω
9 nS
1.5 nS
VDS=10V,ID=2.5A,
VGS=4.5V
1.7 nC
0.3 nC
0.8 nC
Source-Drain Diode Characteristics
ISD Source-Drain Current(Body Diode)
VSD Forward on Voltage(Note 1)
VGS=0V,IS=2.5A
2.5 A
1.2 V
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
-2-
Shenzhen H&M Semiconductor Co.Ltd
http://www.hmsemi.com
No Preview Available ! |
Switch Time Test Circuit and Switching Waveforms:
HM2302B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
Figure1. Power Dissipation
Figure2. Drain Current
TJ-Junction Temperature (℃)
Figure3. Output Characteristics
TJ-Junction Temperature (℃)
Figure4. Transfer Characteristics
-3-
Shenzhen H&M Semiconductor Co.Ltd
http://www.hmsemi.com
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