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MPS2222 PDF даташит

Спецификация MPS2222 изготовлена ​​​​«CDIL» и имеет функцию, называемую «NPN SILICON PLANAR EPITAXIAL TRANSISTORS».

Детали детали

Номер произв MPS2222
Описание NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Производители CDIL
логотип CDIL логотип 

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MPS2222 Даташит, Описание, Даташиты
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
MPS2222
MPS2222A
TO-92
Plastic Package
General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
MPS2222
MPS2222A UNITS
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation@ Ta=25ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
30
60
5
600
625
5.0
1.5
12
-55 to +150
40
75
6
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
THERMAL RESISTANCE
Junction to ambient
Junction to case
Rth(j-a)
Rth(j-c)
200 ºC/W
83.3 ºC/W
Continental Device India Limited
Data Sheet
Page 1 of 5









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MPS2222 Даташит, Описание, Даташиты
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
MPS2222
MPS2222A
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MPS2222
Collector Emitter Voltage
BVCEO IC=10mA,IB=0
>30
Collector Base Voltage
BVCBO IC=10µA,IE=0
>60
Emitter Base Voltage
BVEBO IE=10µA, IC=0
>5
Collector Cut off Current
Collector Cut off Current
Emitter Cut off Current
Base Cut off Current
DC Current Gain
ICEX VCE =60V, VBE=3.0V
ICBO
ICBO VCB=50V, IE = 0
ICBO VCB=60V, IE = 0
ICBO VCB=50V, IE = 0
Ta= 125ºC
ICBO VCB=60V, IE = 0
Ta= 125ºC
IEBO VBE=3V, IC = 0
IBL VCE=60V,VBE=3.0V
<0.01
<10
hFE VCE=10V,IC=0.1mA
>35
VCE=10V,IC=1mA
>50
VCE=10V,IC=10mA
>75
VCE=10V,IC=10mA
TA = -55 ºC
VCE=10V*,IC=150mA 100-300
VCE=1V*,IC=150mA
>50
VCE=10V*,IC=500mA
>30
VBE(sat)*
VBE(sat)*
VCE(sat)*
IC=150mA,IB=15mA
IC=500mA,IB= 50mA
IC=150mA,IB=15mA
IC=500mA,IB=50mA
<1.3
<2.6
<0.4
<1.6
MPS2222A
>40
>75
>6
UNITS
V
V
V
<10
<0.01
<10
nA
µA
µA
µA
µA
<10
<20
>35
>50
>75
>35
100-300
>50
>40
0.6-1.2
<2.0
<0.3
<1.0
nA
nA
µA
V
V
V
V
Continental Device India Limited
Data Sheet
Page 2 of 5









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MPS2222 Даташит, Описание, Даташиты
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
MPS2222
MPS2222A
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MPS2222
DYNAMIC CHARACTERISTICS
Transition Frequency
fT IC=20mA, VCE=20V
f=100MHz
>250
Output Capacitance
Input Capacitance
Input Impedance
Reverse VoltgeTransfer Ratio
Output Admittance
Cob IE=0, VCB=10V
f=1MHz
Cib Ic=0, VEB=0.5V
f=1MHz
hie IC=1mA, VCE=10V
f=1KHz
IC=10mA, VCE=10V
f=1KHz
hre IC=1mA, VCE=10V
f=1KHz
IC=10mA, VCE=10V
f=1KHz
hoe IC=1mA, VCE=10V
f=1KHz
IC=10mA, VCE=10V
f=1KHz
<30
Noise Figure
Collector Base Time Constant
Small Signal Current Gain
NF
rb' Cc
| hfe |
VCE =10V,IC=100uA
RS=1KOHMS,f=1KHZ
VCE =20V,IC=20mA
,f=31.8MHZ
VCE =10V,IC=1mA
f=1KHZ
VCE =10V,IC=10mA
f=1KHZ
SWITCHING CHARCTERISTICS
Delay Time/Rise Time
SYMBOL TEST CONDITION MPS2222
td VCC =30V, VEB =0.5V
tr IC =150mA, IB1= 15mA
Storage Time/Fall Time
ts IC =150mA, IB1= IB2 15mA
tf VCC =30V
*Pulse Condition: = Width < 300us, Duty Cycle < 2%.
Continental Device India Limited
Data Sheet
MPS2222A UNITS
>300
MHz
<8
<25
2.0-8.0
0.25-1.25
PF
PF
KW
KW
<8
<4
5-35
25-200
x 10-4
x 10-4
µMHO
µMHO
<4
<150
50-300
75-375
dB
ps
MPS2222A
<10
<25
UNITS
ns
ns
<225
<60
ns
ns
Page 3 of 5










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