OPB611 PDF даташит
Спецификация OPB611 изготовлена «TT» и имеет функцию, называемую «Slotted Optical Switch». |
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Детали детали
Номер произв | OPB611 |
Описание | Slotted Optical Switch |
Производители | TT |
логотип |
5 Pages
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Sensing and Control
Slotted Optical Switch
OPB610, OPB611, OPB620, OPB621
Features:
• Non-contact switching
• Printed circuit board moun ng
• Enhanced signal to noise ra o
• PIN photodiode sensor for high speed (OPB611, OPB621)
• Lead centers: 0.275: (OPB61_) / 0.320” (OPB62_)
DescripƟon:
The OPB610 and OPB620 slo ed op cal switches consist of an infrared emi ng diode and an NPN silicon phototransistor
with an enhanced low current roll-off to improve contrast ra o and immunity to background irradiance.
The OPB611, OPB621 slo ed op cal switch consists of an infrared emi ng diode and a PIN photodiode with a polysulfone
housing that is opaque to visible light, but transmissive to infrared. The low tr/tf of the PIN photodiode is ideal for high-
speed opera on. The sensi vity to ambient radia on is minimized.
Custom electrical, wire and cabling and connectors are available. Contact your local representa ve or OPTEK for more
informa on.
Ordering InformaƟon
ApplicaƟons:
• Non-contact reflec ve object sensor
• Assembly line automa on
• Machine automa on
• Machine safety
• End of travel sensor
• Door sensor
Part
Number
OPB610
OPB611
OPB620
OPB621
LED Peak
Wavelength
890 nm
Sensor
Rbe Transistor
Diode
Rbe Transistor
Diode
Slot Width /
Depth
Aperture
Lead Length /
EmiƩer / Sensor
Spacing
0.150" / 0.240”
0.190" / 0.285”
0.06” / 0.06”
0.100" / 0.275"
0.100" / 0.320"
OPB610, OPB611
OPB620, OPB621
23
14
OPB610, OPB620
23
RoHS
[ MILLIMETERS]
DIMENSIONS ARE IN:
INCHES
General Note
TT Electronics reserves the right to make changes in product specificaƟon
without noƟce or liability. All informaƟon is subject to TT Electronics’ own data
and is considered accurate at Ɵme of going to print.
© TT electronics plc
14
OPB611, OPB621
Pin # LED Pin # Transistor / Diode
1 Anode 4
Emitter / Anode
2 Cathode 3 Collector / Cathode
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www. electronics.com
Issue E 11/2015 Page 1
No Preview Available ! |
Sensing and Control
Slotted Optical Switch
OPB610, OPB611, OPB620, OPB621
Electrical SpecificaƟons
Absolute Maximum RaƟngs (TA=25°C unless otherwise noted)
Storage and Opera ng Temperature Range
Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron](1)
Input Diode
Forward DC Current
Peak Forward Current (1 μs pulse width, 300 pps)
Reverse DC Voltage
Power Dissipa on(2)
Output Photodiode (OPB621)
Reverse Breakdown Voltage
Power Dissipa on
Output Phototransistor (OPB610, OPB620)
Collector-Emi er Voltage
Emi er-Reverse Current
Collector DC Current
Power Dissipa on(3)
-40°C to +100° C
260° C
50 mA
3A
3V
100 mW
60 V
100 mW
24 V
10 mA
30 mA
200 mW
General Note
TT Electronics reserves the right to make changes in product specificaƟon
without noƟce or liability. All informaƟon is subject to TT Electronics’ own data
and is considered accurate at Ɵme of going to print.
© TT electronics plc
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www. electronics.com
Issue E 11/2015 Page 2
No Preview Available ! |
Sensing and Control
Slotted Optical Switch
OPB610, OPB611, OPB620, OPB621
Electrical SpecificaƟons
Electrical CharacterisƟcs (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode (See OP240 for addi onal informa on)
Forward Voltage
VF OPB610, OPB620
OPB621
--
1.15 -
1.6
1.45
V
V
IR Reverse Current
- - 100 µA
Output Phototransistor (OPB610, OPB620) (See OP505 for addi onal informa on)
IF = 10 mA
IF = 10 mA
VR = 3 V
V(BR)CEO Collector-Emi er Breakdown Voltage
24 -
-
BVECO Emi er-Collector Breakdown Voltage
0.4 -
-
ICEO Collector-Emi er Dark Current
- - 100
Output Photodiode (OPB611, OPB621) (See OP999 for addi onal informa on)
V IC = 100 µA
V ICE = 100 µA
nA VCE = 5 V
ID
V(BR)R
VF
Combined
Dark Current
Reverse Breakdown Voltage
Forward Voltage
- - 65 nA VR = 30 V, EE = 0 mW
60 - - V IR = 100 µA, EE = 0 mW
- - 1.0 V IF = 1 mA, EE = 0 mW
VSAT
Collector-Emi er Satura on Voltage
OPB610, OPB620
On-State Collector/Diode Current
IC(ON)
OPB610, OPB620
OPB611, OPB621
- - 0.4 V IF = 5 mA, IC = 100 µA
1-
- mA IF = 5 mA, VCE = 5 V (gap unblocked)
9 - 90 µA VR = 5 V, IF = 20 mA (gap unblocked)
Notes:
(1)
(2)
(3)
(4)
RMA flux is recommended. Dura on can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be applied to leads when soldering.
Derate linearly 1.33 mW/°C above 25 ° C.
Derate linearly 2.0 mW/°C above 25 ° C.
Plas c body is soluble in chlorinated hydrocarbons and keytones. It is recommended that a trial exposure to flux & cleaning chemicals is performed to ensure sensor is not damaged.
General Note
TT Electronics reserves the right to make changes in product specificaƟon
without noƟce or liability. All informaƟon is subject to TT Electronics’ own data
and is considered accurate at Ɵme of going to print.
© TT electronics plc
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www. electronics.com
Issue E 11/2015 Page 3
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