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WPM2005B PDF даташит

Спецификация WPM2005B изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «Power MOSFET and Schottky Diode».

Детали детали

Номер произв WPM2005B
Описание Power MOSFET and Schottky Diode
Производители WillSEMI
логотип WillSEMI логотип 

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WPM2005B Даташит, Описание, Даташиты
WPM2005B
Power MOSFET and Schottky Diode
Features
z Featuring a MOSFET and Schottky Diode
z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF Schottky
Applications
z Li--Ion Battery Charging
z High Side DC-DC Conversion Circuits
z High Side Drive for Small Brushless DC Motors
z Power Management in Portable, Battery Powered Products
WPM2005B
DFN3×2-8L
MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted)
Parameter
Symbol
Value
Units
Drain-Source voltage
Gate-Source Voltage
Continuous Drain Current
Drain Current-Pulsed
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient
VDSS
VGS
ID
IDM
PD
TJ
Tstg
RԦJA
-20
f8
-2.7
-10
1.1
150
-55~150
110
V
V
A
A
W
ć
ć
ć/W
SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25ć unless otherwise noted)
Parameter
Symbol
Limits
Unit
Peak repetitive reverse voltage
.
DC Blocking voltage
Average rectified forward current
VRRM
VR
IF
20
20
1
V
V
A
pin connections:
1
A
2
A
S
3
G
4
8
C
7
C
6
D
D
5
Marking:
J = Specific Device Code
A = Date Code
Order information
PartNumber
WPM2005BͲ8/TR
Package
DFN3*2- 8L 
Shipping 
3000Tape&Reel
http://www.willsemi.com
Page 1
9/8/2009 Rev1.2









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WPM2005B Даташит, Описание, Даташиты
MOSFET ELECTRICAL CHARACTERISTICS(Tamb=25ć unless otherwise specified)
WPM2005B
Parameter
Symbol
Test Condition
Min Typ
Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate –Source leakage current
BVDSS
IDSS
IGSS
VGS = 0V,ID = -250ȝA
VDS =-16V,VGS = 0V
VGS = f12V,VDS = 0V
-20
-1
f100
V
ȝA
nA
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
VGS(th)
VGS = VDS, ID =-250ȝA
-0.45
V
RDS(on)
VGS = -4.5V, ID = -2.7A
VGS = -2.5V,ID = -2.2A
110 mȍ
160 mȍ
gFS VDS = -10V, ID = -2.7A
7.0
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
VDS = -10V, VGS = 0V,
f = 1.0 MHz
Crss
300 pF
150 pF
50 pF
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Threshold gate charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
QG(TOT)
QG(TH)
QGS
QGD
VGS = -4.5V, VDD = -10V,
ID = -1.0A, RG=6.0ȍ,
VDS = -10V,ID = -2.7A,
VGS =-4.5V
25 ns
45 ns
45 ns
40 ns
3.0 6.5 nC
0.2 nC
1.4 nC
0.7 nC
Drain-Source Diode Characteristics and Maximun Ratings
Forward Diode Voltage
VSD VGS = 0V,IS = -0.9A
-1.15
V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25eC unless otherwise noted)
Parameter
Forward voltage
Reverse current
Symbol
VF1
VF2
VF3
IR1
IR2
Min.
Typ.
0.425
0.480
Max.
0.575
5
15
Unit
V
ȝA
ȝA
Conditions
IF=0.1A
IF=0.5A
IF=1A
VR=10V
VR=20V
Welding temperature curve
http://www.willsemi.com
Page 2
MSL=1
9/8 /2009 Rev1.2









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WPM2005B Даташит, Описание, Даташиты
Typical Characteristics (TJ = 25°C unless otherwise noted)
Output Characteristics
10
VGS = 5 thru 3 V
2.5 V
8
10
8
WPM2005B
Transfer Characteristics
TC = --55_C
25_C
6 6 125_C
2V
44
2
1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS -- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
VGS = 1.8 V
0.5
0.4
0.3
0.2 VGS = 2.5 V
VGS = 4.5 V
0.1
0.0
02468
ID -- Drain Current (A)
Gate Charge
5
VDS = 10 V
ID = 2.7 A
4
10
2
0
0.0
800
0.5 1.0 1.5 2.0 2.5
VGS -- Gate-to-Source Voltage (V)
Capacitance
3.0
Ciss
600
400
200 Coss
Crss
0
0
4
8 12 16 20
VDS -- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
ID = 2.7 A
1.4
3 1.2
2 1.0
1 0.8
0
012345
Qg -- Total Gate Charge (nC)
0.6
--50 --25
0
25 50 75 100 125 150
TJ -- Junction Temperature (_C)
http://www.willsemi.com
Page 3
9/8/2009 Rev1.2










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