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PDF WPM2009D Data sheet ( Hoja de datos )
| Número de pieza | WPM2009D | |
| Descripción | P-MOSFET | |
| Fabricantes | WillSEMI | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de WPM2009D (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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WPM2009D
-20V, -4A, 42m, 2.0W, DFN3x3, P-MOSFET
Descriptions
This single P-Channel MOSFET is produced
using trench process that provides minimum on
resistance performance. WPM2009D is
enhancement power MOSFET with 2.0W power
dissipation mounting 1 in2 pad in a DFN3x3
package. This device is suited for high power
charging circuit of mobile phone application. It
also can be used in a high power switching
application.
WPM2009D
Http://www.willsemi.com
Bottom
DFN3x3-8L
Bottom
Features
z Max Rds(on) 42m @ Vgs=-4.5V
z Max Vds
-20V
z Max Current
-4.0A
z Typical Vgs(th) -0.65V @ Id=-250uA
z Power Dissipation 2.0W (Note2)
z High performance Trench process
z DFN3x3-8L Package
z Pb-Free
Applications
z Battery charging
z Load Switch
z Power Switch
z DC-DC converter
Pin Connection
Top
WPM2009 = Part Number
YY = Year
WW = Week
Marking
Order Information
Device
Package
Shipping
WPM2009D-8/TR DFN3x3-8L 3000/Tape&Reel
Will Semiconductor Ltd.
1
Jan,2012 - Rev. 1.4
1 page  
5
VDS =-6 V
4 ID =-3.3 A
3
2
1
0
0 3 6 9 12
Qg - Total Gate Charge (nC)
Gate Charge
20
10
15
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.2 0.4
0.6 0.8 1.0 1.2
-VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
WPM2009D
1200
1000
800
Ciss
600
400
200
Crss
0
0
4
Coss
8 12 16
-VDS - Drain-to-Source Voltage (V)
Capacitance
20
100
Limited by RDS(on)*
10
IDM Limited
P(t) = 0.0001
1
ID(on)
Limited
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
0.1
TA = 25 °C
Single Pulse
P(t) = 1
P(t) = 10
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Will Semiconductor Ltd.
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient
Impedance, Junction-to-Ambient
10
100 600
5 Jan,2012 - Rev. 1.4
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet WPM2009D.PDF ] | |
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