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WPM2045 PDF даташит

Спецификация WPM2045 изготовлена ​​​​«WillSEMI» и имеет функцию, называемую «Integrated P-Channel Power MOSFET».

Детали детали

Номер произв WPM2045
Описание Integrated P-Channel Power MOSFET
Производители WillSEMI
логотип WillSEMI логотип 

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WPM2045 Даташит, Описание, Даташиты
WPM2045
Integrated P-Channel Power MOSFET (-20V,
-2.8A) and Schottky Diode
VDS (V)
-20
VR(V)
20
MOSFET
Typical Rdson (Ω)
0.093@ VGS=-4.5V
0.122@ VGS=-2.5V
0.160@ VGS=-1.8V
Schottky
Typical VF (V)
WPM2045
Http://www.sh-willsemi.com
SOT-23-6L
Descriptions
The WPM2045 is the P-Channel enhancement MOS
Field Effect Transistor and Schottky Diode as a single
package for DC-DC converter or level shift applications, uses
advanced trench technology and design to provide excellent
RDS(ON) with low gate charge. Standard Product WPM2045 is
Pb-free.
ASG
654
123
K D N/C
Features
Small package SOT-23-6L
Featuring a MOSFET and Schottky Diode
Independent Pin out to each Device to Ease Circuit
Design
Ultra Low VF Schottky Diode
Applications
Li--Ion Battery Charging
High Side DC-DC Conversion Circuits
High Side Drive for Small Brushless DC Motors
Power Management in Portable, Battery Powered
Products
Pin configuration (Top View)
65 4
WLSI
JYWW
12
3
WLSI= Willsemi
J = Device Code
YWW= Date Code
Marking
Order Information
Device
WPM2045-6/TR
Package
SOT-23-6L
Shipping
3000/Tape&Reel
Will Semiconductor Ltd. 1 Aug, 2013 - Rev.1.0









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WPM2045 Даташит, Описание, Даташиты
Absolute Maximum Ratings (P-Channel ,TA=25oC unless otherwise noted)
WPM2045
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a d
Maximum Power Dissipation a d
Continuous Drain Current bd
Maximum Power Dissipation bd
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 s Steady State
-20
±8
-2.8 -2.2
-2.2 -1.8
1.3 0.8
0.8 0.5
-2.5 -2.0
-2.0 -1.6
1.1 0.7
0.7 0.4
-1 0
-55 to 150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Absolute Maximum Ratings (Schottky, TA=25oC unless otherwise noted)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Peak Foward Surge Current (ef )
Operating temperature
Storage temperature
Symbol
VRM
VR
IO
IFSM
Topr
Tstg
Value
20
20
0.5
5
-40 ~ 85
-55 to 150
Unit
V
V
A
A
°C
°C
Thermal Resistance Ratings (TA=25oC unless otherwise noted)
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
Junction-to-Case Thermal Resistance
t ≤ 10 s
Steady State
t ≤ 10 s
Steady State
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
74
115
90
138
63
Maximum
92
143
112
172
78
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Pulse width<380μs
d Maximum junction temperature TJ=150°C.
e Current rating is limited by wire-bonding.
f 8.3ms single half sine-wave superimposed on rated load
Will Semiconductor Ltd.
2
Aug, 2013 - Rev.1.0









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WPM2045 Даташит, Описание, Даташиты
Electronics Characteristics (Ta=25oC, unless otherwise noted)
WPM2045
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BVDSS
IDSS
IGSS
VGS = 0 V, ID = -250uA
VDS =-16 V, VGS = 0V
VDS = 0 V, VGS = ±8V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
VGS(TH)
RDS(on)
VGS = VDS, ID = -250uA
VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2.0A
VGS=-1.8V, ID=-1.0A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VDS=-10V,VGS=0V, F=1MHZ
VDD=-10V,VGS=-4.5V ID=-2.8A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
tf
VDD=-10V,ID=-1.2A,
VGS=-4.5V, RG=6
BODY DIODE CHARACTERISTICS
Forward Voltage
VSD
SCHOTTKY DIODE CHARACTERISTICS
VGS = 0 V, IS = -1.0A
Reverse breakdown voltage
Forward voltage
Reverse current
Diode capacitance
VR IR=100uA
VF1 IF=100mA
VF2 IF=500mA
IR VR=20V
CD VR=5V,F=1MHz
Min
-20
20
Typ Max Unit
V
-1 uA
±1 uA
-0.7 -1.0 V
93 115
122 154 mΩ
160 198
531
61 pF
54
8.1
0.82
nC
1.8
1.1
21.6
8.6
ns
58
8.4
-0.8 -1.5 V
V
0.28 0.36 V
0.41 0.47
150 uA
15.8 pF
Will Semiconductor Ltd. 3 Aug, 2013 - Rev.1.0










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