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PDF NCE4614 Data sheet ( Hoja de datos )
| Número de pieza | NCE4614 | |
| Descripción | N and P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
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http://www.ncepower.com
Pb Free Product
NCE4614
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE4614 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.
General Features
● N-Channel
VDS =40V,ID =8A
RDS(ON) < 19mΩ @ VGS=10V
RDS(ON) < 29mΩ @ VGS=4.5V
N-channel
P-channel
Schematic diagram
● P-Channel
VDS =-40V,ID = -7A
RDS(ON) <35mΩ @ VGS=-10V
RDS(ON) < 45mΩ @ VGS=-4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Package Marking and Ordering Information
SOP-8 top view
Device Marking Device
Device Package Reel Size
Tape width
NCE4614
NCE4614
SOP-8
Ø330mm
12mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Quantity
2500 units
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TA=25℃
TA=70℃
Maximum Power Dissipation
TA=25℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
N-Channel
40
±20
8
6
40
2.0
-55 To 150
P-Channel
-40
±20
-7
-5.5
-30
2.0
-55 To 150
Unit
V
V
A
A
W
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE4614
Vgs Gate-Source Voltage (V)
Figure7 Rdson vs Vgs
TJ-Junction Temperature(℃)
Figure 8 Power Dissipation
Qg Gate Charge (nC)
Figure 9 Gate Charge
Vds Drain-Source Voltage (V)
Figure 10 Source- Drain Diode Forward
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
Vds Drain-Source Voltage (V)
Figure 12 Safe Operation Area
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NCE4614.PDF ] | |
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