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PDF NCE15P25 Data sheet ( Hoja de datos )
| Número de pieza | NCE15P25 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
| Logotipo |  |
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http://www.ncepower.com
Pb Free Product
NCE15P25
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE15P25 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in a wide variety of applications.
General Features
● VDS =-150V,ID =-25A
RDS(ON) <140mΩ @ VGS=-10V
● Super high dense cell design
● Advanced trench process technology
● Reliable and rugged
● High density cell design for ultra low On-Resistance
Schematic diagram
Application
● Portable equipment and battery powered systems
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE15P25
NCE15P25
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-150
±20
-25
-17
-100
120
0.8
-55 To 175
Unit
V
V
A
A
A
W
W/℃
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE15P25
-Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TC Case Temperature(℃)
Figure 9 Drain Current vs Case Temperature
-Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 Power De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE15P25.PDF ] | |
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