NVMFS5C423NL PDF даташит
Спецификация NVMFS5C423NL изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NVMFS5C423NL |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
6 Pages
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NVMFS5C423NL
Power MOSFET
40 V, 2.0 mW, 150 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• NVMFS5C423NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreesnt1R, 3qJ)C
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
C(Nuortreesnt1R, 2qJ,A3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
±20
150
110
83
42
31
22
3.7
1.8
900
−55 to
+ 175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 81 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 14 A)
EAS 280 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
1.8 °C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS
40 V
RDS(ON) MAX
2.0 mW @ 10 V
3.0 mW @ 4.5 V
ID MAX
150 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
XXXXXX = 5C423L
XXXXXX = (NVMFS5C423NL) or
XXXXXX = 423LWF
XXXXXX = (NVMFS5C423NLWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 0
1
Publication Order Number:
NVMFS5C423NL/D
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NVMFS5C423NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
40
VVDGSS == 400VV,
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = 20 V
V
17 mV/°C
10
250 mA
100 nA
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 4.5 V
ID = 50 A
VGS = 10 V
ID = 50 A
VDS =15 V, ID = 50 A
1.2 2.0 V
−5.3 mV/°C
2.4 3.0
1.6 2.0 mW
140 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS (Note 5)
CISS
COSS
CRSS
QG(TOT)
QG(TOT)
QG(TH)
QGS
QGD
VGP
VGS = 0 V, f = 1 MHz, VDS = 20 V
VGS = 4.5 V, VDS = 20 V; ID = 50 A
VGS = 10 V, VDS = 20 V; ID = 50 A
VGS = 4.5 V, VDS = 20 V; ID = 50 A
3100
1300
60
23
50
5.0
9.8
6.7
3.1
pF
nC
nC
V
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 20 V,
ID = 50 A, RG = 1.0 W
12
72
ns
28
8.4
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 50 A
TJ = 125°C
0.85 1.2
0.73
V
Reverse Recovery Time
tRR
41
Charge Time
Discharge Time
ta
tb
VGS
=
0
VI,Sd=IS/5d0t
=
A
100
A/ms,
23 ns
23
Reverse Recovery Charge
QRR
40 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NVMFS5C423NL
TYPICAL CHARACTERISTICS
220
200
10 V to
3.8 V
3.6 V
180
160 3.4 V
140
120 3.2 V
100
80 3.0 V
60 2.8 V
40
20 2.6 V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
220
200 VDS = 3 V
180
160
140
120
100
80
60
40
20
0
0 0.5
1
TJ = 25°C
TJ = 125°C
TJ = −55°C
1.5 2
2.5 3
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
4
5.0
4.5 TJ = 25°C
4.0 ID = 50 A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, GATE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
5.0
4.5 TJ = 25°C
4.0
3.5
3.0 VGS = 4.5 V
2.5
2.0 VGS = 10 V
1.5
1.0
0.5
020 40 60 80 100 120 140 160 180 200
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.9
VGS = 10 V
1.7 ID = 50 A
1.5
1.3
1.1
0.9
100,000
10,000
1000
100
TJ = 150°C
TJ = 125°C
TJ = 85°C
0.7
−50 −25 0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
175
10
5 10 15 20 25 30 35 40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVMFS5C423NL | Power MOSFET ( Transistor ) | ON Semiconductor |
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