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NVMFS5C426N PDF даташит

Спецификация NVMFS5C426N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVMFS5C426N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVMFS5C426N Даташит, Описание, Даташиты
NVMFS5C426N
Power MOSFET
40 V, 1.3 mW, 235 A, Single N−Channel
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C426NWF − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 3)
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
TC = 25°C
Steady
State
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Steady
State
TA = 100°C
TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
40
±20
235
166
128
64
41
29
3.8
1.9
900
−55 to
+ 175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 19 A)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 122 A
EAS 739 mJ
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
1.2 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS
40 V
RDS(ON) MAX
1.3 mW @ 10 V
ID MAX
235 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
XXXXXX = 5C426N
XXXXXX = (NVMFS5C426N) or
XXXXXX = 426NWF
XXXXXX = (NVMFS5C426NWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 0
1
Publication Order Number:
NVMFS5C426N/D









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NVMFS5C426N Даташит, Описание, Даташиты
NVMFS5C426N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
40
VGS = 0 V,
VDS = 40 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = 20 V
V
9.6 mV/°C
10
mA
100
100 nA
Gate Threshold Voltage
VGS(TH)
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 50 A
VDS =15 V, ID = 50 A
2.5 3.5 V
−8.6 mV/°C
1.1 1.3 mW
145 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS (Note 5)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 10 V, VDS = 20 V; ID = 50 A
VGS = 10 V, VDS = 20 V; ID = 50 A
4300
2100
59
65
13
20
12
4.7
pF
nC
V
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 2.5 W
15
47
ns
36
9.0
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 50 A
TJ = 125°C
0.82 1.2
0.68
V
Reverse Recovery Time
tRR
63
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 50 A
34 ns
29
Reverse Recovery Charge
QRR
92 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NVMFS5C426N Даташит, Описание, Даташиты
NVMFS5C426N
TYPICAL CHARACTERISTICS
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0.0
10 V to
6.0 V
5.2 V
4.8 V
4.4 V
4.0 V
0.5 1.0 1.5
2.0 2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
3.0
300
280 VDS = 10 V
260
240
220
200
180
160
140
120
100
80
60
40
20
0
01
TJ = 25°C
TJ = 125°C
23
TJ = −55°C
456
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
7
5
4.5 TJ = 25°C
ID = 50 A
4
3.5
3
2.5
2
1.5
1
0.5
0
3.0 4.0 5.0 6.0 7.0 8.0 9.0
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
VGS = 10 V
1.6 ID = 50 A
1.4
2.2
TJ = 25°C
2.0
1.8
1.6
1.4
1.2 VGS = 10 V
1.0
0.8
0.6
0 20 40 60 80 100 120 140 160 180 200
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.E−03
1.E−04
TJ = 150°C
1.2 1.E−05
1.0 TJ = 125°C
1.E−06
0.8 TJ = 85°C
0.6
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1.E−07
175 5
10 15 20
25 30
35 40
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVMFS5C426NPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

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