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NVMFS5C628NL PDF даташит

Спецификация NVMFS5C628NL изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVMFS5C628NL
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVMFS5C628NL Даташит, Описание, Даташиты
NVMFS5C628NL
Power MOSFET
60 V, 2.4 mW, 150 A, Single N−Channel
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C628NLWF − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 3)
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
TC = 25°C
Steady
State
TC = 100°C
TC = 25°C
TC = 100°C
TA = 25°C
Steady
State
TA = 100°C
TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
±20
150
110
110
56
28
20
3.7
1.9
900
−55 to
+ 175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 9 A)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 120 A
EAS 285 mJ
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
1.3 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
40
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS
60 V
RDS(ON) MAX
2.4 mW @ 10 V
3.3 mW @ 4.5 V
ID MAX
150 A
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S XXXXXX
S AYWZZ
G
D
D
D
XXXXXX = 5C628L
XXXXXX = (NVMFS5C628NL) or
XXXXXX = 628LWF
XXXXXX = (NVMFS5C628NLWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 0
1
Publication Order Number:
NVMFS5C628NL/D









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NVMFS5C628NL Даташит, Описание, Даташиты
NVMFS5C628NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
60
VGS = 0 V,
VDS = 60 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = 20 V
V
26 mV/°C
10
mA
250
100 nA
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 135 mA
VGS = 10 V
ID = 50 A
VGS = 4.5 V
ID = 50 A
VDS =15 V, ID = 50 A
1.2 2.0 V
−5.0 mV/°C
2.0 2.4
mW
2.6 3.3
110 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS (Note 5)
CISS
COSS
CRSS
QG(TOT)
QG(TOT)
QG(TH)
QGS
QGD
VGP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 48 V; ID = 50 A
VGS = 10 V, VDS = 48 V; ID = 50 A
VGS = 10 V, VDS = 48 V; ID = 50 A
3600
1700
28
24
52
6.0
12
4.5
3.0
pF
nC
nC
nC
V
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 48 V,
ID = 50 A, RG = 2.5 W
10
55
ns
37
8.5
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 50 A
TJ = 125°C
0.8 1.2
0.75
V
Reverse Recovery Time
tRR
55
Charge Time
Discharge Time
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 50 A
28 ns
28
Reverse Recovery Charge
QRR
60 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NVMFS5C628NL Даташит, Описание, Даташиты
NVMFS5C628NL
TYPICAL CHARACTERISTICS
250
225
200
175
150
125
100
75
50
25
0
0
VGS = 4.0 V to 10 V
3.6 V
3.2 V
2.8 V
2.4 V
1.0 2.0 3.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
4.0
250
VDS = 5 V
200
150
100
50
0
0
TJ = 25°C
TJ = 125°C
TJ = −55°C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
4.0
9
8
TJ = 25°C
ID = 50 A
7
6
5
4
3
2
1
2 3 4 5 6 7 8 9 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
3.0
TJ = 25°C
2.8
2.6
VGS = 4.5 V
2.4
2.2
VGS = 10 V
2.0
1.8
1.6
0 20 40 60 80 100 120 140 160
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
VGS = 10 V
1.8 ID = 50 A
1,000,000
100,000
TJ = 175°C
1.6
10,000
TJ = 125°C
1.4
1000
TJ = 85°C
1.2 100
TJ = 25°C
1.0 10
0.8
0.6
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
175
1
0.1
5 15 25 35 45 55
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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