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NDT02N40 PDF даташит

Спецификация NDT02N40 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв NDT02N40
Описание N-Channel Power MOSFET / Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NDT02N40 Даташит, Описание, Даташиты
NDD02N40, NDT02N40
N-Channel Power MOSFET
400 V, 5.5 W
Features
100% Avalanche Tested
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJC
Steady State, TC = 25°C (Note 1)
Continuous Drain Current RqJC
Steady State, TC = 100°C (Note 1)
Power Dissipation – RqJC
Steady State, TC = 25°C
Pulsed Drain Current
Continuous Source Current (Body
Diode)
VDSS
VGS
ID
ID
PD
IDM
IS
400
±20
1.7 0.4
V
V
A
1.1 0.25 A
39 2.0 W
6.9 1.6
1.7 0.4
A
A
Single Pulse Drain−to−Source
Avalanche Energy, ID = 1 A
Maximum Temperature for Soldering
Leads
EAS
TL
120 mJ
260 °C
Operating Junction and Storage
Temperature
TJ, TSTG −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. IS = 1.7 A, di/dt 100 A/ms, VDD BVDSS, TJ = +150°C
THERMAL RESISTANCE
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
NDD02N40
Junction−to−Ambient Steady State
NDD02N40 (Note 4)
NDD02N40−1 (Note 3)
NDT02N40 (Note 4)
NDT02N40 (Note 5)
RqJC
RqJA
3.2 °C/W
°C/W
39
96
62
151
3. Insertion mounted
4. Surface mounted on FR4 board using 1sq. pad size
(Cu area = 1.127sq. [2 oz] including traces)
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 4
1
http://onsemi.com
V(BR)DSS
400 V
RDS(ON) MAX
5.5 W @ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
MARKING
DIAGRAMS
4
Drain
12
3
4 DPAK
CASE 369C
(Surface Mount)
STYLE 2
1
Gate
2
Drain
3
Source
4
Drain
4
IPAK
CASE 369D
(Straight Lead)
1
2
3
Y
WW
2N40
STYLE 2
= Year
= Work Week
= Device Code
12 3
Gate Drain Source
G = Pb−Free Package
1 23
A
Y
W
2N40
Drain
4 SOT−223
4
CASE 318E
STYLE 3
AYW
2N40G
= Assembly Location
G
= Year
12 3
= Work Week
= Specific Device Code
Gate Drain Source
G = Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NDD02N40/D









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NDT02N40 Даташит, Описание, Даташиты
NDD02N40, NDT02N40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS
VGS = 0 V, ID = 1 mA
400
V
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ
Temperature Coefficient
Reference to 25°C,
ID = 1 mA
460 mV/°C
Drain−to−Source Leakage Current
IDSS
VDS = 400 V, VGS = 0 V TJ = 25°C
1 mA
TJ = 125°C
50
Gate−to−Source Leakage Current
IGSS
VGS = ±20 V
±10 mA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Co-
efficient
VGS(TH)
VGS(TH)/TJ
VDS = VGS, ID = 250 mA
Reference to 25°C, ID = 50 mA
0.8 1.6
4.6
2V
mV/°C
Static Drain-to-Source On Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
RDS(on)
gFS
VGS = 10 V, ID = 0.22 A
VDS = 15 V, ID = 0.22 A
4.5 5.5 W
1.1 S
Input Capacitance (Note 7)
Output Capacitance (Note 7)
Reverse Transfer Capacitance
(Note 7)
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
121 pF
16
3
Total Gate Charge (Note 7)
Gate-to-Source Charge (Note 7)
Gate-to-Drain (“Miller”) Charge
(Note 7)
Qg
Qgs
Qgd VDS = 200 V, ID = 1.7 A, VGS = 10 V
5.5 nC
0.8
1.0
Plateau Voltage
VGP
Gate Resistance
Rg
RESISTIVE SWITCHING CHARACTERISTICS (Note 8)
3.1 V
8.7 W
Turn-on Delay Time
td(on)
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
SOURCE−DRAIN DIODE CHARACTERISTICS
VDD = 200 V, ID = 1.7 A,
VGS = 10 V, RG = 0 W
5 ns
7
14
4
Diode Forward Voltage
VSD TJ = 25°C
IS = 1.7 A, VGS = 0 V
TJ = 100°C
0.9 1.6 V
0.8
Reverse Recovery Time
trr
146 ns
Charge Time
Discharge Time
ta VGS = 0 V, VDD = 30 V, IS = 1.7 A,
tb di/dt = 100 A/ms
37
109
Reverse Recovery Charge
Qrr
260 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Width 380 ms, Duty Cycle 2%.
7. Guaranteed by design.
8. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2









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NDT02N40 Даташит, Описание, Даташиты
NDD02N40, NDT02N40
ORDERING INFORMATION
Device
Package
Shipping
NDD02N40−1G
IPAK
(Pb−Free, Halogen Free)
75 Units / Rail
NDD02N40T4G
DPAK
(Pb−Free, Halogen Free)
2500 / Tape & Reel
NDT02N40T1G
SOT−223
(Pb−Free, Halogen Free)
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3










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Номер в каталогеОписаниеПроизводители
NDT02N40N-Channel Power MOSFET / TransistorON Semiconductor
ON Semiconductor

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