NDUL09N150C PDF даташит
Спецификация NDUL09N150C изготовлена «ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )». |
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Детали детали
Номер произв | NDUL09N150C |
Описание | Power MOSFET ( Transistor ) |
Производители | ON Semiconductor |
логотип |
5 Pages
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NDUL09N150C
Power MOSFET
1500V, 3.0Ω, 9A, N-Channel
www.onsemi.com
Features
Low On-Resistance
Ultra High Voltage
Pb-Free and RoHS Compliance
High Speed Switching
100% Avalanche Tested
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (DC) Limited by Package
Drain Current (Pulse)
PW 10s, duty cycle 1%
Symbol
VDSS
VGSS
ID
IDL
IDP
Power Dissipation
Junction Temperature
Tc=25C
PD
Tj
Storage Temperature
Tstg
Source Current (Body Diode)
Avalanche Energy (Single Pulse) *1
Lead Temperature for Soldering
Purposes, 3 mm from case for 10 seconds
IS
EAS
TL
Value
1500
±30
9
6
18
3.0
78
150
55 to
+150
6
197
260
Unit
V
V
A
A
A
W
C
C
A
mJ
C
Electrical Connection
N-Channel
Marking
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient *2
Note : *1 VDD=50V, L=10mH, IAV=6A (Fig.1)
*2 Insertion mounted
Symbol
RJC
RJA
Value
1.60
41.7
Unit
C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
February 2015 - Rev. 1
1
Publication Order Number :
NDUL09N150C/D
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Electrical Characteristics at Ta 25C
NDUL09N150C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
Conditions
ID=10mA, VGS=0V
VDS=1200V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=3A
ID=3A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=6A
IS=6A, VGS=0V
See Fig.3
IS=6A, VGS=0V, di/dt=100A/s
min
1500
Value
typ
2
5.2
2.2
2025
222
66
33
75
500
111
114
12
57
0.8
1050
9010
max
1
100
4
3.0
1.5
Unit
V
mA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 : Unclamped Inductive Switching
Test Circuit
Fig.2 : Switching Time Test Circuit
Fig.3 : Reverse Recovery Time Test Circuit
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NDUL09N150C
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Номер в каталоге | Описание | Производители |
NDUL09N150C | Power MOSFET ( Transistor ) | ON Semiconductor |
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