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PDF NTMFS4982NF Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4982NF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4982NF
Power MOSFET
30 V, 207 A, Single N−Channel, SO−8 FL
Features
• Integrated Schottky Diode
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Server, Netcom, POL
• Synchronous Rectification for DC−DC Converters
• Low Side Switching
• High Performance Applications
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
36 A
TA = 85°C
26
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current
10 sec
RqJA
v
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
2.7 W
60 A
43
Power Dissipation
RqJA, t v 10 sec
Continuous Drain
C(Nuortreen2t)RqJA
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
PD
ID
7.4 W
26.5 A
19
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
1.5 W
207 A
149
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current limited by package
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD
IDM
IDmaxpkg
TTSJT,G
IS
dV/dt
89.3
350
100
−55 to
+150
54
6
W
A
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, IL = 50 Apk,
L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
125 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
1.3 mW @ 10 V
1.9 mW @ 4.5 V
ID MAX
207 A
N−CHANNEL MOSFET
D (5, 6)
G
(4)
S (1, 2, 3)
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
SD
S 4982NF
S AYWZZ
GD
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
NTMFS4982NFT1G
Package
SO−8FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTMFS4982NFT3G SO−8FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 3
1
Publication Order Number:
NTMFS4982NF/D
1 page  
NTMFS4982NF
TYPICAL CHARACTERISTICS
8000
7000
6000
5000
4000
3000
2000
1000
0
0
VGS = 0 V
Ciss TJ = 25°C
Coss
Crss
5 10 15 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
25
10000
1000
VDD = 15 V
ID = 10 A
VGS = 10 V
100
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10 ms
100 ms
10 1 ms
1 VGS = 20 V
Single Pulse
TC = 25°C
0.1 RDS(on) Limit
Thermal Limit
0.01 Package Limit
0.1
1
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
11
10 QT
9
8
7
6
5
4 Qgs
Qgd
3 TJ = 25°C
2
1
VDD = 15 V
VGS = 10 V
ID = 25 A
0
0 10 20 30 40 50 60 70 80 90
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
9 VGS = 0 V
8
7
6
5
4 TJ = 25°C
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
130
120 ID = 50 A
110
100
90
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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