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NVC6S5A354PLZ PDF даташит

Спецификация NVC6S5A354PLZ изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVC6S5A354PLZ
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVC6S5A354PLZ Даташит, Описание, Даташиты
NVC6S5A354PLZ
Power MOSFET
60V, 100m, 4A, P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and low
on resistance. This device is suitable for applications with low gate charge
driving or low on resistance requirements.
Features
4V drive
High ESD protection
Low On-Resistance
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Reverse Battery Protection
High Side Load Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
60 V
Gate to Source Voltage
VGSS
20 V
Drain Current (DC) (Note 2)
Drain Current (DC) (Note 3)
ID
4 A
3 A
Drain Current (Pulse)
PW 10s, duty cycle 1%
IDP
16 A
Power Dissipation
Ta=25C(Note 2)
Power Dissipation
Ta=25C(Note 3)
1.9 W
PD
0.9 W
Junction Temperature and
Storage Temperature
Tj, Tstg
55 to +175 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Junction to Ambient
(Note 2)
(Note 3)
RJA
78.1
160
Note 2 : Surface mounted on ceramic substrate(1500mm2 0.8mm).
Note 3 : Surface mounted on FR4 board using a 92mm2, 1 oz. Cu pad.
Unit
C/W
C/W
www.onsemi.com
VDSS
60V
RDS(on) Max
100m@ 10V
135m@ 4.5V
145m@ 4.0V
ID Max
4A
ELECTRICAL CONNECTION
P-Channel
1, 2, 5, 6
1 : Drain
3
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
4
654
1 2 3 CPH6
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
December 2015 - Rev. 0
1
Publication Order Number :
NVC6S5A354PLZ/D









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NVC6S5A354PLZ Даташит, Описание, Даташиты
NVC6S5A354PLZ
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 4)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V
60 V
Zero-Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1 A
Gate to Source Leakage Current
IGSS
VGS=16V, VDS=0V
10 A
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
1.2 2.6 V
Forward Transconductance
gFS VDS=10V, ID=2A
4.8 S
Static Drain to Source On-State
Resistance
RDS(on)
ID=2A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4V
77 100 m
96 135 m
103 145 m
Input Capacitance
Ciss
600 pF
Output Capacitance
Coss
VDS=20V, f=1MHz
60 pF
Reverse Transfer Capacitance
Crss
50 pF
Turn-ON Delay Time
td(on)
5.8 ns
Rise Time
Turn-OFF Delay Time
tr
td(off)
See Fig.1
12 ns
78 ns
Fall Time
tf
40 ns
Total Gate Charge
Qg
14 nC
Gate to Source Charge
Qgs VDS=30V, VGS=10V, ID=4A
1.6 nC
Gate to Drain “Miller” Charge
Qgd
3.4 nC
Forward Diode Voltage
VSD
IS=4A, VGS=0V
0.84
1.2 V
Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Switching Time Test Circuit
www.onsemi.com
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NVC6S5A354PLZ Даташит, Описание, Даташиты
NVC6S5A354PLZ
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Номер в каталогеОписаниеПроизводители
NVC6S5A354PLZPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

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