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SCH1430 PDF даташит

Спецификация SCH1430 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв SCH1430
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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SCH1430 Даташит, Описание, Даташиты
SCH1430
Power MOSFET
20V, 125m, 2A, Single N-Channel
This low-profile high-power MOSFET is produced using ON
Semiconductor’s trench technology, which is specifically designed to
minimize gate charge and ultra low on resistance. This device is suitable for
applications with low gate charge driving or ultra low on resistance
requirements.
Features
Low On-Resistance
1.8V drive
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)
Typical Applications
Load Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
20 V
Gate to Source Voltage
VGSS
±12 V
Drain Current (DC)
ID 2 A
Drain Current (Pulse)
PW 10μs, duty cycle 1%
IDP
8A
Power Dissipation
When mounted on ceramic substrate
(900mm2 × 0.8mm)
PD
0.8 W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg
55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 × 0.8mm)
Symbol
RθJA
Value
Unit
156.2 °C/W
www.onsemi.com
VDSS
20V
RDS(on) Max
125m@ 4.5V
190m@ 2.5V
310m@ 1.8V
ID Max
2A
ELECTRICAL CONNECTION
N-Channel
1, 2, 5, 6
1 : Drain
2 : Drain
3 3 : Gate
4 : Source
5 : Drain
6 : Drain
4
PACKING TYPE : TL
MARKING
ZF
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
August 2015 - Rev. 2
1
Publication Order Number :
SCH1430/D









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SCH1430 Даташит, Описание, Даташиты
SCH1430
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4.5V
ID=0.5A, VGS=2.5V
ID=0.3A, VGS=1.8V
20 V
1 μA
±10 μA
0.4 1.3 V
1.9 S
93 125 mΩ
135 190 mΩ
200 310 mΩ
128 pF
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VDS=10V, f=1MHz
28 pF
21 pF
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
See specified Test Circuit
5.1
11
14.5
12
1.8
ns
ns
ns
ns
nC
Gate to Source Charge
Gate to Drain “Miller” Charge
Qgs VDS=10V, VGS=4.5V, ID=2A
Qgd
0.3 nC
0.55 nC
Forward Diode Voltage
VSD
IS=2A, VGS=0V
0.85 1.2 V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10μs
D.C.≤1%
G
VDD=10V
ID=1A
RL=10Ω
D VOUT
P.G 50Ω S SCH1430
www.onsemi.com
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SCH1430 Даташит, Описание, Даташиты
SCH1430
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