NDDL01N60Z Datasheet PDF - ON Semiconductor
| Part Number | NDDL01N60Z | |
| Description | N-Channel Power MOSFET / Transistor | |
| Manufacturers | ON Semiconductor | |
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NDDL01N60Z, NDTL01N60Z
N-Channel Power MOSFET
600 V, 15 W
Features
• 100% Avalanche Tested
• Gate Charge Minimized
• Zener−protected
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current
Steady State, TC = 25°C (Note 1)
Continuous Drain Current
Steady State, TC = 100°C (Note 1)
Power Dissipation
Steady State, TC = 25°C
Pulsed Drain Current, tp = 10 ms
Source Current (Body Diode)
Single Pulse Drain−to−Source
Avalanche Energy (ID = 0.8 A)
Peak Diode Recovery (Note 2)
VDSS
VGS
ID
ID
PD
IDM
IS
EAS
dv/dt
600
±30
0.8 0.25
V
V
A
0.5 0.15 A
26 2 W
3.4
2.5 1.7
12
A
A
mJ
4.5 V/ns
Lead Temperature for Soldering
Leads
TL 260 °C
Operating Junction and Storage
Temperature
TJ, TSTG −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. IS = 1.5 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS
THERMAL RESISTANCE
Parameter
Symbol Value Unit
Junction−to−Case (Drain)
NDDL1N60Z
Junction−to−Ambient (Note 4) NDDL1N60Z
(Note 3) NDDL1N60Z−1
(Note 4) NDTL1N60Z
(Note 5) NDTL1N60Z
RqJC
RqJA
4.8 °C/W
42 °C/W
96
62
151
3. Insertion mounted.
4. Surface−mounted on FR4 board using 1” sq. pad size
(Cu area = 1.127” sq. [2 oz] including traces).
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
http://onsemi.com
V(BR)DSS
600 V
RDS(ON) MAX
15 W @ 10 V
N−Channel MOSFET
D (2, 4)
G (1)
S (3)
4
1 23
SOT−223
CASE 318E
STYLE 3
4
4
12
3
DPAK
CASE 369C
STYLE 2
1 23
IPAK
CASE 369D
STYLE 2
MARKING & ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 0
1
Publication Order Number:
NDDL01N60Z/D
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NDDL01N60Z, NDTL01N60Z
TYPICAL CHARACTERISTICS
1.15
1.10
1.05
ID = 50 mA
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0.65
−50 −25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Threshold Voltage Variation with
Temperature
10,000
1000
100
10
TJ = 150°C
TJ = 125°C
TJ = 100°C
1
0 100 200 300 400 500 600
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
1000
100
10
1
0.1
CISS
VGS = 0 V
TJ = 25°C
f = 1 MHz
12
11
10
9
8
7
COSS
6
5
4
CRSS
3
2
1
0
1 10 100 1000 0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Capacitance Variation
VDS
QT
350
300
QGS
QGD
VGS 250
200
150
VDS = 300 V
TJ = 25°C
ID = 0.4 A
100
50
0
1 2 3 45
QG, TOTAL GATE CHARGE (nC)
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
VGS = 10 V
VDD = 300 V
ID = 0.8 A
10
td(off)
tf
td(on)
tr
10
TJ = 100°C
1 TJ = 125°C
0.1
0.01
TJ = 150°C
TJ = 25°C
1
0.1
1
10 100
RG, GATE RESISTANCE (W)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
0.001
TJ = −55°C
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 12. Diode Forward Voltage vs. Current
http://onsemi.com
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| Information | Total 9 Pages | |
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