NOA1305 PDF даташит
Спецификация NOA1305 изготовлена «ON Semiconductor» и имеет функцию, называемую «Ambient Light Sensor». |
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Детали детали
Номер произв | NOA1305 |
Описание | Ambient Light Sensor |
Производители | ON Semiconductor |
логотип |
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NOA1305
Ambient Light Sensor with
I2C Interface and Dark
Current Compensation
Description
The NOA1305 ambient light sensor (ALS) is designed for handheld
applications and integrates a 16−bit ADC, a 2−wire I2C digital
interface, internal clock oscillator and a power down mode. The built
in dynamic dark current compensation and precision calibration
capability coupled with excellent IR and 50/60 Hz flicker rejection
enables highly accurate measurements from very low light levels to
full sunlight. The device can support simple count equals lux readings
in interrupt−driven or polling modes. The NOA1305 employs proprietary
CMOS image sensing technology from ON Semiconductor to provide
large signal to noise ratio (SNR) and wide dynamic range (DR) over
the entire operating temperature range. The optical filter used with this
chip provides a light response similar to that of the human eye.
Features
• Senses Ambient Light and Provides an Output Count Proportional to
the Ambient Light Intensity
• Photopic Spectral Response
• Dynamic Dark Current Compensation
• IR Rejection Eliminates Need for Additional IR Photodiode
• Less than 120 mA Active Power Consumption in Normal Operation
• Less than 2 mA Power Dissipation in Power Down Mode
• Interrupt Signal Notifies Host of Significant Intensity Changes
• Wide Operating Voltage Range (2.4 V to 3.6 V)
• Wide Operating Temperature Range (−40°C to 85°C)
• Linear Response Over the Full Operating Range
• Senses Intensity of Ambient Light from 0.165 Lux to Over 100K Lux
• 8 Selectable Integration Times Ranging from 6.25 ms to 800 ms
• No External Components Required
• Built−in 16−bit ADC
• I2C Serial Communication Port Supports Standard and Fast Modes
• Metal Mask Programmable I2C Slave Address Option Available
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Saves Display Power In Applications Such As:
♦ Cell Phones, PDAs, MP3 Players, GPS
♦ Cameras, Video Recorders
♦ Mobile Devices with Displays or Backlit Keypads
http://onsemi.com
CUDFN6
CU SUFFIX
CASE 505AD
PIN ASSIGNMENT
VSS
NC
SCL
1
2
3
6
VDD
5
INT
4
SDA
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NOA1305CUTAG CUDFN6
(Pb−Free)
2500 / Tape &
Reel
Temperature Range
−40°C to 85°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
October, 2012 − Rev. 0
1
Publication Order Number:
NOA1305/D
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NOA1305
Vin = 2.0 to 3.6 V
hn
R1 R2 R3
1k 1k 1k
MCU
C1
10 m
6 VDD
C2
10 m
1
VSS
SDA
SCL
INT
4
3
5
IC1
NOA1305
SDA
SCL
INT
Cb not to exceed 400 pF including
all parasitic capacitances
Figure 1. Typical Application Circuit
SDA
ADC
II22CC IInntteerrffaaccee
&
SCL
hn
CCoonnttrrooll
INT
Photo
Diode
Reference
Diode
Osc
Figure 2. Simplified Block Diagram
Table 1. PIN FUNCTION DESCRIPTION
Pin Pin Name
Description
1
VSS
Ground pin.
2 NC No connection.
3
SCL
External I2C clock supplied by the I2C master. Requires a 1 kW pull−up resistor.
4
SDA
Bi−directional data signal for communications between this device and the I2C master. Requires a 1 kW
pull−up resistor.
5 INT Interrupt request to the host. Programmable active state, open−drain output and requires an external
1 kW pull−up resistor.
6
VDD
Power pin.
Table 2. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input power supply
VDD
4.0 V
Input voltage range
Output voltage range
Maximum Junction Temperature
Storage Temperature
ESD Capability, Human Body Model (Note 1)
ESD Capability, Charged Device Model (Note 1)
ESD Capability, Machine Model (Note 1)
Moisture Sensitivity Level
Vin
Vout
TJ(max)
TSTG
ESDHBM
ESDCDM
ESDMM
MSL
−0.3 to VDD + 0.2
−0.3 to VDD + 0.2
85
−40 to 85
2
750 (corner pins), 500 (center pins)
200
5
V
V
°C
°C
kV
V
V
−
Lead Temperature Soldering (Note 2)
TSLD
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Charged Device Model tested per ESD−STM5.3.1−1999
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating: ≤ 100 mA per JEDEC standard: JESD78
2. For information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
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NOA1305
Table 3. OPERATING RANGES
Standard Mode
Fast Mode
Power supply voltage
Rating
Symbol
Min
Max
Min
Max
VDD
2.4
3.6
2.4
3.6
Power supply current
Quiescent supply current (Note 3)
Low level input voltage (VDD related input levels)
High level input voltage (VDD related input levels) (Note 4)
Hysteresis of Schmitt trigger inputs (VDD > 2 V)
Low level output voltage (open drain) at 3 mA sink current
(VDD > 2 V)
IDD
IDD_qe
VIL
VIH
Vhys
VOL
−0.5
0.7 VDD
N/A
0
120
2.0
0.3 VDD
VDD + 0.5
N/A
0.4
−0.5
0.7 VDD
0.05 VDD
0
120
2.0
0.3 VDD
VDD + 0.5
−
0.4
Output low current (VOl=0.4 V)
Output low current (VOl=0.6 V)
Output fall time from VIHmin to VILmax with a bus capacit-
ance, Cb from 10 pF to 400 pF (Note 4)
Pulse width of spikes which must be suppressed by the
input filter
IOL
IOL
tof
tSP
3
N/A
−
N/A
N/A 3 N/A
N/A 6 N/A
250 20+0.1Cb 250
N/A 0
50
Input current of IO pin with an input voltage between 0.1
II
−10
10
−10
10
VDD and 0.9 VDD
Capacitance on IO pin
CI − 10 − 10
Operating free−air temperature range
TA −40 85 −40 85
3. Current dissipation when a software Power Down command is sent to the device.
4. Cb = capacitance of one bus line, maximum value of which including all parasitic capacitances should be less than 400 pF.
Unit
V
mA
mA
V
V
V
V
mA
mA
ns
ns
mA
pF
°C
Table 4. ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, these specifications apply over VDD = 3.3 V, −40°C < TA < 85°C) (Note 5)
Standard Mode
Fast Mode
Parameter
Symbol
Min
Max
Min
Max Unit
SCL clock frequency
fSCL
0
100
0
400 kHz
Hold time for START condition. After this period, the first
tHD;STA
4.0
−
0.6
− mS
clock pulse is generated.
Low period of SCL clock
High period of SCL clock
Set−up time for a repeated START condition
Data hold time for I2C−bus devices
Data set−up time
Rise time of both SDA and SCL (Note 6)
Fall time of both SDA and SCL (Note 6)
Set−up time for STOP condition
Bus free time between STOP and START condition
Capacitive load for each bus line
Noise margin at the low level for each connected device
(including hysteresis)
tLOW
tHIGH
tSU;STA
tHD;DAT_d
tSU;DAT
tr
tf
tSU;STO
tBUF
Cb
VnL
4.7
4.0
4.7
0
250
−
−
4.0
4.7
−
0.1 VDD
−
3.45
−
1000
300
−
−
400
−
1.3
0.6
0.6
0
100
20 + 0.1Cb
20 + 0.1Cb
0.6
1.3
−
0.1 VDD
−
0.9
−
300
300
−
−
400
−
mS
mS
mS
mS
nS
nS
nS
mS
mS
pF
V
Noise margin at the high level for each connected device
(including hysteresis)
VnH
0.2 VDD
−
0.2 VDD
−
V
Parameter
Symbol
Typ
Typ Unit
Internal Oscillator Frequency
fosc 1
1 MHz
5. Refer to Figure 3 for more information on AC characteristics
6. The rise time and fall time are measured with a pull−up resistor Rp = 1 kW and Cb of 400 pF (including all parasitic capacitances).
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