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NSR05T40P2 PDF даташит

Спецификация NSR05T40P2 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв NSR05T40P2
Описание Schottky Barrier Diode
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSR05T40P2 Даташит, Описание, Даташиты
NSR05T40P2
500 mA, 40 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in spacing saving
micro−packaging ideal for space constraint applications.
Features
Low Forward Voltage Drop − 580 mV (Typ.) @ IF = 500 mA
Low Reverse Current − 2.0 mA (Typ.) @ VR = 40 V
500 mA of Continuous Forward Current
ESD Rating: − Human Body Model: Class 3B
− Charged Device Model: Class IV
High Switching Speed
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
MAXIMUM RATINGS
Rating
Symbol Value Unit
Reverse Voltage
Forward Current (DC)
Forward Surge Current
(60 Hz @ 1 cycle)
VR 40 V
IF 500 mA
IFSM
3.0
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
IFRM
1.0
A
ESD Rating: Human Body Model
Charged Device Model
ESD > 8 kV
>1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
MARKING
2 DIAGRAM
1
SOD−923
CASE 514AA
YK MG
G
12
YK = Specific Device Code
M = Month Code
G = Pb−Free Package
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping
NSR05T40P2T5G SOD−923
2 mm Pitch
(Pb−Free) 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 1
1
Publication Order Number:
NSR05T40P2/D









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NSR05T40P2 Даташит, Описание, Даташиты
NSR05T40P2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Max
345
360
175
715
Unit
°C/W
mW
°C/W
mW
°C
1000
D = 0.5
100 0.2
0.1
0.05
0.02
10
0.01
1 SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100 1000
PULSE TIME (sec)
Figure 1. Thermal Response (Note 1)
1000
D = 0.5
100
0.2
0.1
0.05
10 0.02
0.01
SINGLE PULSE
1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100 1000
PULSE TIME (sec)
Figure 2. Thermal Response (Note 2)
www.onsemi.com
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NSR05T40P2 Даташит, Описание, Даташиты
NSR05T40P2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Reverse Leakage
(VR = 10 V)
(VR = 40 V)
IR mA
0.2 5.0
2.0 55
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
(IF = 500 mA)
VF mV
360 410
450 500
490 550
580 700
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT 29 pF
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 3)
trr 8.0 ns
Peak Forward Recovery Voltage
(IF = 100 mA, tr = 20 ns, Figure 4)
VFRM
560 mV
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
0.1 mF
tr tp
10%
t
IF
trr t
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 3. Recovery Time Equivalent Test Circuit
IF tr
VF
Time
Figure 4. Peak Forward Recovery Voltage Definition
VFRM
VF
Time
www.onsemi.com
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Номер в каталогеОписаниеПроизводители
NSR05T40P2Schottky Barrier DiodeON Semiconductor
ON Semiconductor

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