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NCS199A3 PDF даташит

Спецификация NCS199A3 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Current-Shunt Monitor».

Детали детали

Номер произв NCS199A3
Описание Current-Shunt Monitor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NCS199A3 Даташит, Описание, Даташиты
NCS199A1, NCS199A2,
NCS199A3
Current-Shunt Monitor,
Voltage Output,
Bi-Directional Zero-Drift
The NCS199A1, NCS199A2 and NCS199A3 are voltage output
current shunt monitors that can measure voltage across shunts at
common−mode voltages from −0.3 V to 26 V, independent of supply
voltage. Three fixed gains are available: 50 V/V, 100 V/V or 200 V/V.
The low offset of the zero−drift architecture enables current sensing
with maximum drops across the shunt as low as 10 mV full−scale.
The devices can operate from a single +2.7 V to +26 V power
supply, drawing a maximum of 100 mA of supply current. All versions
are specified over the extended operating temperature range (–40°C to
+125°C).
Features
Wide Common−Mode Input Range −0.3 V to 26 V
Supply Voltage Range from 2.7 V to 26 V
Low Offset Voltage ±150 mV Max
Low Offset Drift (0.5 mV/°C)
Low Gain Error (max 1.5%)
Rail−to−rail Input and Output Capability
Low Current Consumption (typ 65 mA, 100 mA max)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−free Devices
Typical Applications
Current Sensing (High−Side/Low−Side)
Automotive
Telecom
Sensors
www.onsemi.com
SC70−6
SQ SUFFIX
CASE 419B
PIN CONNECTIONS
REF 1
GND 2
VS 3
6 OUT
5 IN−
4 IN+
MARKING DIAGRAM
6
XXXMG
G
1
XXX = Specific Device Code (See page 4)
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Product
Gain
R3−R4
R1−R2
NCS199A1
50
20 kW
1 MW
NCS199A2 100
10 kW
1 MW
NCS199A3 200
5 kW
1 MW
VOUT + ǒILOAD RSHUNTǓGAIN ) VREF
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 4 of this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 1
1
Publication Order Number:
NCS199/D









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NCS199A3 Даташит, Описание, Даташиты
Supply
NCS199A1, NCS199A2, NCS199A3
RSHUNT
Load
NCS199Ax
R1
R3
IN−
IN+
R4
+2.7 V to +26 V
VS
0.01 mF
To
0.1 mF
+
R2
OUT
REF
Output
Reference
Voltage
Figure 1. Application Schematic
Table 1. MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage (Note 1)
Analog Inputs
Differential (VIN+)−(VIN−)
Common−Mode (Note 2)
VS
VIN+,VIN−
+26
−26 to +26
GND−0.3 to +26
V
V
REF Input
Output (Note 2)
Input Current into Any Pin (Note 2)
VREF
VOUT
GND−0.3 to ( Vs) +0.3
GND−0.3 to ( Vs) +0.3
5
V
V
mA
Maximum Junction Temperature
Storage Temperature Range
TJ(max)
TSTG
+150
−65 to +150
°C
°C
ESD Capability, Human Body Model (Note 3)
HBM
±3000
V
ESD Capability, Machine Model (Note 3)
MM ±100 V
Charged Device Model (Note 3)
CDM
±1000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters.
2. Input voltage at any pin may exceed the voltage shown if current at that pin is limited to 5 mA.
3. This device series incorporates ESD protection and is tested by the following methods
ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115)
ESD Charged Device Model tested per AEC−Q100−011.
Latchup Current Maximum Rating: 50 mA per JEDEC standard: JESD78
Table 2. THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Characteristics, SC70 (Note 4)
Thermal Resistance, Junction−to−Air (Note 5)
RqJA
250 °C/W
4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for safe
operating parameters.
5. Values based on copper area of 645 mm2 (or 1 in2) of 1 oz copper thickness and FR4 PCB substrate.
Table 3. RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max Unit
Supply Voltage
VS 2.7
26 V
Ambient Temperature
TA −40
125 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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NCS199A3 Даташит, Описание, Даташиты
NCS199A1, NCS199A2, NCS199A3
Table 4. ELECTRICAL CHARACTERISTICS
Boldface limits apply over the specified temperature range, TA = −40°C to 125°C, guaranteed by characterization and/or design.
At TA = +25°C, VSENSE = VIN+ − VIN−, VS = +5 V, VIN+ = 12 V, and VREF = VS/2, unless otherwise noted.
Parameter
Test Conditions
Symbol Min
Typ
Max
Unit
GAIN
NCS199A1
NCS199A2
NCS199A3
G 50
V/V
100
200
Gain Error
Gain Error vs. Temperature
Nonlinearity Error
Maximum Capacitive Load
VSENSE = −5 mV to 5 mV
TA = −10°C to 125°C
VSENSE = −5 mV to 5 mV
No sustained oscillation
Ge
+0.2
7
±0.01
1
+1.5 %
20 ppm/°C
%
nF
VOLTAGE OFFSET
Offset Voltage
NCS199A1/2/3
NCV199A2
(RTI Note 6), VSENSE = 0 mV
VOS
±5.0 ±150 mV
±20 ±200
Offset Drift
NCS199A2, NCS199A3
NCS199A1
dV/dT
0.1 0.6 mV/°C
0.5 2.0
INPUT
Input Bias Current
Common−Mode Input Voltage Range
Common−Mode NCS199A2,
Rejection Ratio NCS199A3
Common−Mode NCS199A1
Rejection Ratio
Common−Mode NCV199A2
Rejection Ratio
OUTPUT
VSENSE = 0 mV
VS = 5 V, VIN+ = 2 V to +26 V,
VSENSE = 0 mV
VS = 3.3 V, VIN+ = 3 V to +26 V,
VSENSE = 0 mV
VS = 3.3 V, VIN+ = 0 V to +26 V,
VSENSE = 0 mV (TA = −10°C to 85°C)
VS = 5 V, VIN+ = 2 V to +26 V,
VSENSE = 0 mV
VS = 3.3 V, VIN+ = 3 V to +26 V,
VSENSE = 0 mV
VS = 3.3 V, VIN+ = 0 V to +26 V,
VSENSE = 0 mV (TA = −10°C to 85°C)
VS = 5 V, VIN+ = 2 V to +26 V,
VSENSE = 0 mV
VS = 3.3 V, VIN+ = 3 V to +26 V,
VSENSE = 0 mV
VS = 3.3 V, VIN+ = 0 V to +26 V,
VSENSE = 0 mV (TA = −10°C to 85°C)
IIB
VCM
CMRR
CMRR
CMRR
−0.3
100
100
100
97
97
97
95
95
95
115
115
120
110
110
115
115
115
120
60 mA
26 V
dB
dB
dB
dB
dB
dB
dB
dB
dB
Output Voltage Low
Output Voltage High
DYNAMIC PERFORMANCE
Referenced from GND
RL = 10 kΩ to Ground
Referenced from VS
RL = 10 kΩ to Ground
VOL
VOH
5 50 mV
0.05 0.2
V
Bandwidth (f−3dB)
Slew Rate
CLOAD = 10 pF, NCS199A1
CLOAD = 10 pF, NCS199A2
CLOAD = 10 pF, NCS199A3
BW
SR
100
60
40
0.4
kHz
V/ms
NOISE
Spectral Density, 1 kHz (RTI Note 6)
en 35 nV/ǠHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. RTI = referenced−to−input.
www.onsemi.com
3










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Номер в каталогеОписаниеПроизводители
NCS199A1Current-Shunt MonitorON Semiconductor
ON Semiconductor
NCS199A2Current-Shunt MonitorON Semiconductor
ON Semiconductor
NCS199A3Current-Shunt MonitorON Semiconductor
ON Semiconductor

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