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NSR0340V2 PDF даташит

Спецификация NSR0340V2 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв NSR0340V2
Описание Schottky Barrier Diode
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSR0340V2 Даташит, Описание, Даташиты
NSR0340V2
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dcdc
converter, clamping and protection applications in portable devices.
NSR0340V2 in a SOD523 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
Very Low Forward Voltage Drop 410 mV @ 100 mA
Low Reverse Current 0.5 mA @ 25 V VR
250 mA of Continuous Forward Current
Power Dissipation of 200 mW with Minimum Trace
Very High Switching Speed
Low Capacitance CT = 6 pF
This is a PbFree Device
Typical Applications
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dcdc Converters
Reverse Voltage and Current Protection
Clamping & Protection
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs and PDAs
GPS
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Continuous Current (DC)
NonRepetitive Peak Forward Surge
Current
Symbol
VR
IF
IFSM
Value
40
250
1.0
Unit
Vdc
mA
A
ESD Rating: Human Body Model
Machine Model
ESD
Class 2
Class A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 VOLT SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
2
1
SOD523
CASE 502
MARKING DIAGRAM
AD M G
1 G2
AD = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation position may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
NSR0340V2T1G SOD523 3000 / Tape & Reel
(PbFree)
NSR0340V2T5G SOD523 8000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
June, 2013 Rev. 1
1
Publication Order Number:
NSR0340V2T1/D









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NSR0340V2 Даташит, Описание, Даташиты
NSR0340V2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ TA = 25°C
RPqDJA
600
200
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ TA = 25°C
RPqDJA
300
400
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06” thick singlesided. Operating to steady state.
2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06” thick singlesided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage
(VR = 10 V)
(VR = 25 V)
(VR = 40 V)
IR
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF
Total Capacitance
(VR = 10 V, f = 1 MHz)
CT
Reverse Recovery Time
(IF = IR = 10 mA, IR = 1.0 mA)
trr
Min
Typ
0.2
0.5
1.5
310
410
470
6.0
5.0
Unit
°C/W
mW
°C/W
mW
°C
Max Unit
mA
1.0
3.0
6.0
mV
350
450
510
pF
ns
DC Current
+ Source
0.1 mF
tr tp
0V
10%
750 mH
50 W Output
Pulse
Generator
0.1 mF
Adjust for IRM
IF
DUT
VR 90%
Pulse Generator
Output
IF
trr
50 W Input
Oscilloscope
RL = 50 W
Current
Transformer
IRM iR(REC) = 1 mA
Output Pulse
(IF = IRM = 10 mA; measured
at iR(REC) = 1 mA)
1. DC Current Source is adjusted for a Forward Current (IF) of 10 mA.
2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.
3. Pulse Generator transition time << trr.
4. IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.
5. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2









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NSR0340V2 Даташит, Описание, Даташиты
NSR0340V2
1000
100 125°C
10 150°C
1
0.1
85°C 25°C
40°C
0.01
0
0.1 0.2 0.3 0.4
VF, FORWARD VOLTAGE (V)
Figure 2. Forward Voltage
30
0.5
10000
1000 150°C
100 125°C
10
85°C
1
0.1 25°C
0.01
0.001
0.0001
40°C
0.00001
0.6 0
5 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (V)
Figure 3. Leakage Current
25 TA = 25°C
20
15
10
5
0
0 5 10 15 20 25 30 35 40
VR, REVERSE VOLTAGE (V)
Figure 4. Total Capacitance
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NSR0340V2Schottky Barrier DiodeON Semiconductor
ON Semiconductor
NSR0340V2T1GSchottky Barrier DiodeON Semiconductor
ON Semiconductor

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