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PDF NTMFS4833NS Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4833NS | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4833NS
SENSEFET) Power MOSFET
30 V, 156 A, Single N−Channel, SO−8 FL
Features
• Accurate, Lossless Current Sensing
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
VDSS
30
Gate−to−Source Voltage
Continuous Drain
C(Nuortreen1t)RqJA
TA = 25°C
TA = 85°C
VGS
ID
±20
26
18
Unit
V
V
A
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen2t)RqJA
Power Dissipation
RqJA (Note 2)
Continuous Drain
C(Nuortreen1t)RqJC
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
2.31 W
16 A
11.6
0.9 W
156 A
113
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain
Current
TA = 25°C,
tp = 10 ms
Operating Junction and Storage
Temperature
PD
IDM
TJ, TSTG
86.2
312
−55 to
+150
W
A
°C
Source Current (Body Diode)
Drain to Source DV/DT
IS
dV/dt
86 A
6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V,
IL = 35 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
612.5 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
2.2 mW @ 10 V
3.4 mW @ 4.5 V
DRAIN
ID MAX
156 A
127 A
GATE
Kelvin
SENSE SOURCE
1
SO−8 FLAT LEAD
CASE 506BQ
MARKING
DIAGRAM
D (Do Not Connect)
S NC
S 4833NS SENSE
S AYWZZ KELVIN
G K1
D (Do Not Connect)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4833NST1G SO−8 FL 1500 Tape / Reel
(Pb−Free)
NTMFS4833NST3G SO−8 FL 5000 Tape / Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 1
1
Publication Order Number:
NTMFS4833NS/D
1 page  
NTMFS4833NS
TYPICAL CHARACTERISTIC CURVES
6000
5000
4000
Ciss
12 QT
20
10
8 VDS
VGS
15
3000
2000
Coss
TJ = 25°C
VGS = 0 V
f = 1 MHz
1000
0 Crss
0
5 10 15 20 25
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
30
6
QGS
4
2
0
0 10
QGD
10
5
ID = 30 A
TJ = 25°C 0
20 30 40 50 60 70 80 90
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
1000
VGS = 11.5 V
VDD = 15 V
ID = 15 A
100
10
td(off)
tf
tr
td(on)
30
TJ = 25°C
25 VGS = 0 V
20
15
10
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
5
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
100
10 1 ms
10 ms
1 VGS = 20 V
SINGLE PULSE
TC = 25°C
0.1 RDS(on) LIMIT
THERMAL LIMIT
0.01 PACKAGE LIMIT
0.01 0.1
1
100 ms
1 ms
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTMFS4833NS.PDF ] | |
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