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SB80W10T PDF даташит

Спецификация SB80W10T изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв SB80W10T
Описание Schottky Barrier Diode
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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SB80W10T Даташит, Описание, Даташиты
Ordering number : ENA1817A
SB80W10T
Schottky Barrier Diode
100V, 8A, Low IR, Monolithic Dual TP Common Cathode
http://onsemi.com
Features
VF max=0.8V
IR max=0.1mA
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Note) *1. Indicates the total value
*2. Value per element
Symbol
VRRM
VRSM
IO*1
IO*2
IFSM
Tj
Tstg
Conditions
50Hz resistive load, sine wave Tc=62°C
50Hz resistive load, sine wave Tc=121°C
50Hz sine wave, 1 cycle
Ratings
100
105
8
4
40
--55 to +150
--55 to +150
Unit
V
V
A
A
A
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7518-001
Package Dimensions
unit : mm (typ)
7003-002
6.5
5.0
2.3
0.5 SB80W10T-H
6.5
5.0
44
2.3
0.5
SB80W10T-TL-H
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : Anode
2 : Cathode
3 : Anode
4 : Cathode
TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : Anode
2 : Cathode
3 : Anode
4 : Cathode
TP-FA
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
S80W
10
LOT No.
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
13
TL
Semiconductor Components Industries, LLC, 2013
September, 2013
2
80812 TKIM/O2710SB TKIM TC-00002519 No. A1817-1/7









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SB80W10T Даташит, Описание, Даташиты
SB80W10T
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Transient Thermal Resistance
Note) *2. Value per element
VR
VF
IR
C
Rth(j-c)
Conditions
IR=1mA, Tj=25°C *2
IF=3.0A, Tj=25°C *2
VR=50V, Tj=25°C *2
VR=10V, Tj=25°C *2
Junction-Case : Smoothed DC
Ordering Information
Device
SB80W10T-H
SB80W10T-TL-H
Package
TP
TP-FA
Shipping
500pcs./bag
700pcs./reel
min
100
Ratings
typ
90
6
max
0.8
0.1
Unit
V
V
mA
pF
°C / W
memo
Pb Free and Halogen Free
IF -- VF
10
1.0
0.1
0.01
0
175
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Forward Voltage,
Tc max --
VIFO--
V
IT15887
150
125
100
75
50 (1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
25 (3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0 (5)DC
01234
5
(1)
67
Average Output Current, IO -- A
(5)
(3)
(4)
(2)
89
IT15889
1E+04
1E+03
1E+02
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1E-07
0
7
5
3
2
IR -- VR
Ta=150°C
125°C
100°C
75°C
50°C
25°C
0°C
--25°C
20 40 60 80 100 120
ReverseCVo-l-tagVe,RVR -- V
IT15888
f=1MHz
100
7
5
3
2
10
1.0
23
5 7 10
23
5 7 100
2
Reverse Voltage, VR -- V
IT15890
No. A1817-2/7









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SB80W10T Даташит, Описание, Даташиты
Taping Specication
SB80W10T-TL-H
SB80W10T
No. A1817-3/7










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