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SBE002 PDF даташит

Спецификация SBE002 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Schottky Barrier Diode».

Детали детали

Номер произв SBE002
Описание Schottky Barrier Diode
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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SBE002 Даташит, Описание, Даташиты
Ordering number : EN6343B
SBE002
Schottky Barrier Diode
50V, 1A, Low IR, Single CPH6
http://onsemi.com
Applications
High frequency rectification (switching regulators, converters, choppers)
Features
Low forward voltage (VF max=0.55V)
Halogen free compliance
Fast reverse recovery time (trr max=10ns)
Low switching noise
Low leakage current and high reliability due to highly reliable planar structure
Ultrasmall package, permitting SBE002-applied sets to be compact and slim (mounting height 0.9mm)
Large allowable power dissipation
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
50Hz sine wave, 1 cycle
Ratings
50
55
1
10
--55 to +125
--55 to +125
Unit
V
V
A
A
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7018A-012
2.9
654
0.15
SBE002-TL-E
SBE002-TL-W
Product & Package Information
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
0.05
12
0.95
3
0.4
1 : Cathode
2 : Cathode
3 : No contact
4 : Anode
5 : Cathode
6 : Cathode
CPH6
TL
Electrical Connection
65 4
1 23
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
June, 2014
60414HK TC-00003128/91912TKIM/O0899GI(KT) No.6343-1/4









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SBE002 Даташит, Описание, Даташиты
SBE002
Electrical Characteristics at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth(j-a)
Conditions
IR=300µA
IF=1A
VR=25V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted on ceramic substrate (600mm2×0.8mm)
min
50
Ratings
typ
52
110
max
0.55
80
10
Unit
V
V
µA
pF
ns
°C / W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
trr Test Cicuit
Duty10%
10µs
50
100
10
-- 5V
trr
Ordering Information
Device
SBE002-TL-E
SBE002-TL-W
Package
CPH6
CPH6
Shipping
3,000pcs./reel
3,000pcs./reel
memo
Pb-Free
Pb-Free and Halogen Free
No.6343-2/4









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SBE002 Даташит, Описание, Даташиты
SBE002
10 IF -- VF
7
5
3
2
Ta=125°C 25°C
1.0
7
5
3
2
0.1
7
5
0 0.2 0.4 0.6 0.8
Forward Voltage, VF -- V
1.4 PF(AV) -- IO
(1) Rectangular wave θ=60°
1.2 (2) Rectangular wave θ=120°
(3) Rectangular wave θ=180°
(4) Sine wave θ=180°
1.0
Rectangular wave
0.8 (4)
0.6
θ
360°
(1)
(2)
1.0 1.2
IT00608
(3)
0.4
Sine wave
0.2
180°
0 360°
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Average Forward Current, IO -- A IT00610
14 IS -- t
Current waveform 50Hz sine wave
12 IS
10 20ms
t
8
6
4
2
0
7 0.01
23
5 7 0.1
23
Time, t -- s
5 7 1.0
23
IT00612
10
5
3
2
1.0
5
3
2
0.1
5
3
2
0.01
5
3
2
0.001
5
0
5
3
2
100
7
5
3
2
10
1.0
IR -- VR
Ta=125°C
100°C
75°C
50°C
25°C
10 20 30 40 50 60
Reverse Voltage, VR -- V
C -- VR
IT00609
f=1MHz
23
5 7 10
23
Reverse Voltage, VR -- V
5 7 100
IT00611
No.6343-3/4










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