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PDF NLAS9099 Data sheet ( Hoja de datos )
| Número de pieza | NLAS9099 | |
| Descripción | Dual DPDT Ultra-Low RON Switch | |
| Fabricantes | ON Semiconductor | |
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NLAS9099
Product Preview
Dual DPDT Ultra-Low RON
Switch
The NLAS9099 is a dual independent ultra-low RON DPDT analog
switch. This device is designed for low operating voltage, high current
switching of speaker output for cell phone applications. It can switch a
balanced stereo output. The NLAS9099 can handle a balanced
microphone/speaker/ring-tone generator in a monophone mode. The
device contains a break-before-make feature.
Features
•ăSuitable for Dual SIM Cards
•ăSingle Supply Operation
1.65 to 4.5 V VCC
Function Directly from LiON Battery
•ăMaximum Breakdown Voltage: 5.5 V
•ăTiny 3 x 3 mm QFN Pb-Free Package
Meet JEDEC MO-220 Specifications
•ăLow Static Power
•ăThis is a Pb-Free Device*
Typical Applications
•ăCell Phone Speaker/Microphone Switching
•ăRingtone-Chip/Amplifier Switching
•ăFour Unbalanced (Single-Ended) Switches
•ăStereo Balanced (Push-Pull) Switching
Important Information
•ăESD Protection:
HBM (Human Body Model) > 8000 V
MM (Machine Model) > 400 V
•ăContinuous Current Rating Through each Switch ±300 mA
•ăConforms to: JEDEC MO-220, Issue H, Variation VEED-6
•ăPin for Pin Compatible with STG3699
http://onsemi.com
MARKING
DIAGRAMS
ÇÇÇÇQFN-16
CASE 485AE
16
1
NLAB
1 3699
ALYWG
G
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb-Free Package
(Note: Microdot may be in either location)
D1 1S1 Vcc 4S2
16 15 14 13
1S2 1
12 D4
1-2IN 2
2S1 3
11 4S1
10 3-4IN
D2 4
9 3S2
5678
2S2 GND 3S1 D3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
For additional
information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. P2
1
Publication Order Number:
NLAS9099/D
1 page  
NLAS9099
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
tON Turn-On Time
tOFF Turn-Off Time
tBBM Minimum Break-Before-Make Time
Test Conditions
RL = 50 W, CL = 35 pF
(Figures 3 and 4)
RL = 50 W, CL = 35 pF
(Figures 3 and 4)
VIS = 3.0
RL = 50 W, CL = 35 pF
(Figure 2)
CIN Control Pin Input Capacitance
CSN SN Port Capacitance
CD D Port Capacitance When Switch is Enabled
Typical Characteristics
are at 25°C.
VCC
(V)
2.3 - 4.5
Guaranteed Maximum Limit
VIS *405C to 255C
t855C
(V) Min Typ* Max Min Max Unit
1.5 50 60 ns
2.3 - 4.5 1.5
30 40 ns
3.0 1.5 2 15
ns
Typical @ 25, VCC = 4.5 V
7.0
72
230
pF
pF
pF
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
BW
VONL
VISO
Q
THD
VCT
Parameter
Maximum On-Channel -3dB
Bandwidth or Minimum Frequency
Response (Figure 12)
Maximum Feed-through On Loss
Off-Channel Isolation (Figure 13)
Charge Injection Select Input to
Common I/O (Figure 8)
Total Harmonic Distortion THD +
Noise (Figure 7)
Channel-to-Channel Crosstalk
Condition
VIN centered between VCC and GND
(Figure 5)
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND (Figure 5)
f = 100 kHz; VIS = 1 V RMS; CL = 5 pF
VIN centered between VCC and GND(Figure 5)
VIN = VCC to GND, RIS = 0 W, CL = 1 nF
Q = CL x DVOUT (Figure 6)
FIS = 20 Hz to 20 kHz, RL = Rgen = 600 W, CL = 50 pF
VIS = 2 VPP
f = 100 kHz; VIS = 1 V RMS, CL = 5 pF, RL = 50 W
VIN centered between VCC and GND (Figure 5)
VCC
(V)
1.65 - 4.5
1.65 - 4.5
1.65 - 4.5
1.65 - 4.5
4.5
1.65 - 4.5
255C
Typical
20
-0.06
-62
50
0.01
-62
Unit
MHz
dB
dB
pC
%
dB
Off-Channel Isolation = 20log10 (Vcom/Vno), Vcom = output,
Vno = input to off switch.
http://onsemi.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NLAS9099.PDF ] | |
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