NSBA115TDP6 PDF даташит
Спецификация NSBA115TDP6 изготовлена «ON Semiconductor» и имеет функцию, называемую «Dual PNP Bias Resistor Transistors». |
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Детали детали
Номер произв | NSBA115TDP6 |
Описание | Dual PNP Bias Resistor Transistors |
Производители | ON Semiconductor |
логотип |
5 Pages
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NSBA115TDP6
Dual PNP Bias Resistor
Transistors
R1 = 100 kW, R2 = 8 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
This Device is Pb-Free, Halogen Free/BFR Free and is RoHS
Compliant
MAXIMUM RATINGS
(TA = 25C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
NSBA115TDP6T5G
SOT−963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAM
SOT−963
CASE 527AD
MG
1G
V = Specific Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
Publication Order Number:
DTA115TD/D
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NSBA115TDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
NSBA115TDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
NSBA115TDP6 (SOT−963) BOTH JUNCTION HEATED (Note 3)
Total Device Dissipation
TA = 25C
Derate above 25C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Junction and Storage Temperature Range
TJ, Tstg
1. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
2. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
3. Both junction heated values assume total power is sum of two equally powered channels.
Max
231
269
1.9
2.2
540
464
339
408
2.7
3.3
369
306
−55 to +150
Unit
MW
mW/C
C/W
MW
mW/C
C/W
C
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NSBA115TDP6
ELECTRICAL CHARACTERISTICS (TA = 25C, common for Q1 and Q2, unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
−
−
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
−
−
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
−
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = 5.0 mA, VCE = 10 V)
hFE
160 350
Collector-Emitter Saturation Voltage (Note 4)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
−
−
Input Voltage (Off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off) − 0.62
Input Voltage (On)
(VCE = 0.2 V, IC = 1.0 mA)
Vi(on)
−
1.0
Output Voltage (On)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
−
−
Output Voltage (Off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
−
Input Resistor
R1 70 100
Resistor Ratio
4. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle 2%.
R1/R2
−
−
Max Unit
nAdc
100
nAdc
500
mAdc
0.1
Vdc
−
Vdc
−
−
V
0.25
Vdc
−
Vdc
−
Vdc
0.2
Vdc
−
130 kW
−
250
200
(1)
150
100
(1) SOT−963; 100 mm2, 1 oz. Copper Trace
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
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