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NTS1045MFS PDF даташит

Спецификация NTS1045MFS изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Exceptionally Low Forward Voltage Trench-based Schottky Rectifier».

Детали детали

Номер произв NTS1045MFS
Описание Exceptionally Low Forward Voltage Trench-based Schottky Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTS1045MFS Даташит, Описание, Даташиты
NTS1045MFS,
NRVTS1045MFS
Exceptionally Low Forward
Voltage Trench-based
Schottky Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Typical Applications
Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
45 VOLTS
1,2,3
5,6
MARKING
DIAGRAM
A
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
A
A
Not Used
TH1045
AYWWZZ
TH1045
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
C
C
ORDERING INFORMATION
Device
NTS1045MFST1G
Package
SO−8 FL
(Pb−Free)
Shipping
1500 /
Tape & Reel
NTS1045MFST3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
NRVTS1045MFST1G SO−8 FL
1500 /
(Pb−Free) Tape & Reel
NRVTS1045MFST3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 0
1
Publication Order Number:
NTS1045MFS/D









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NTS1045MFS Даташит, Описание, Даташиты
NTS1045MFS, NRVTS1045MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 166°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 162°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
45
10
20
210
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
Tstg −65 to +150 °C
TJ
−55 to +150
°C
EAS 100 mJ
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 5.0 Amps, TJ = 25°C)
(iF = 10 Amps, TJ = 25°C)
Symbol
RθJC
Typ
Max Unit
2.0 °C/W
vF
0.42
V
0.48 0.57
(iF = 5.0 Amps, TJ = 125°C)
(iF = 10 Amps, TJ = 125°C)
0.34 −
0.41 0.51
Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
20 120 mA
7.0 45 mA
Diode Capacitance
(Rated dc Voltage, TJ = 25°C, f = 1 MHz)
Cd
300
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
http://onsemi.com
2









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NTS1045MFS Даташит, Описание, Даташиты
NTS1045MFS, NRVTS1045MFS
TYPICAL CHARACTERISTICS
100 100
10 TA = 125°C
TA = 150°C
1 TA = 25°C
10 TA = 150°C
TA = 125°C
1
TA = 25°C
0.1
0
TA = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
0.1
0
TA = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
TA = 150°C
TA = 125°C
TA = 25°C
1.E−01
1.E−02
1.E−03
1.E−04
TA = 150°C
TA = 125°C
TA = 25°C
1.E−06
1.E−05
0 5 10 15 20 25 30 35 40 45
0 5 10 15 20 25 30 35 40 45
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10,000
TJ = 25°C
20
15
DC
1000
Square Wave
10
100
1
10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
50
5
0
100
RqJC = 2.1°C/W
110 120 130 140 150 160
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating
170
http://onsemi.com
3










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Номер в каталогеОписаниеПроизводители
NTS1045MFSExceptionally Low Forward Voltage Trench-based Schottky RectifierON Semiconductor
ON Semiconductor

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