NTS1260MFS PDF даташит
Спецификация NTS1260MFS изготовлена «ON Semiconductor» и имеет функцию, называемую «Exceptionally Low Forward Voltage Trench-based Schottky Rectifier». |
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Детали детали
Номер произв | NTS1260MFS |
Описание | Exceptionally Low Forward Voltage Trench-based Schottky Rectifier |
Производители | ON Semiconductor |
логотип |
5 Pages
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NTS1260MFS
Exceptionally Low Forward
Voltage Trench-based
Schottky Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• These are Pb−Free and Halide−Free Devices
Typical Applications
• Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
12 AMPERES
60 VOLTS
1,2,3
5,6
MARKING
DIAGRAM
A
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
A
A
Not Used
TH1260
AYWWZZ
TH1260
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
C
C
ORDERING INFORMATION
Device
NTS1260MFST1G
Package
SO−8 FL
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTS1260MFST3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 0
1
Publication Order Number:
NTS1260MFS/D
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NTS1260MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 137°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 134°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
60
12
24
210
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
Tstg −65 to +150 °C
TJ
−55 to +150
°C
EAS 200 mJ
2
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
RθJC
Max
2.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1)
(iF = 6.0 Amps, TJ = 25°C)
(iF = 12 Amps, TJ = 25°C)
Symbol
vF
Typ
0.46
0.53
Max Unit
V
−
0.60
(iF = 6.0 Amps, TJ = 125°C)
(iF = 12 Amps, TJ = 125°C)
0.39 −
0.48 0.58
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
− 90 mA
15 20 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
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NTS1260MFS
TYPICAL CHARACTERISTICS
100 100
10
TA = 125°C
1
TA = 150°C
TA = 25°C
10
TA = 125°C
1
TA = 150°C
TA = 25°C
0.1
0
TA = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
0.8
0.1
0
TA = −55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E+00
1.E−02
TA = 150°C
1.E−01
TA = 150°C
1.E−03
1.E−04
1.E−05
TA = 125°C
TA = 25°C
1.E−02
1.E−03
1.E−04
1.E−05
TA = 125°C
TA = 25°C
1.E−06
5 10 15 20 25 30 35 40 45 50 55 60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1.E−06
5 10 15 20 25 30 35 40 45 50 55 60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
10,000
1000
TJ = 25°C
100
0.1
1
10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0
DC
Square Wave
RqJC = 2.0°C/W
20 40 60 80 100 120 140
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating per Device
www.onsemi.com
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Номер в каталоге | Описание | Производители |
NTS1260MFS | Exceptionally Low Forward Voltage Trench-based Schottky Rectifier | ON Semiconductor |
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