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NVJD5121N PDF даташит

Спецификация NVJD5121N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NVJD5121N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NVJD5121N Даташит, Описание, Даташиты
NVJD5121N
Power MOSFET
60 V, 300 mA, Dual N−Channel with ESD
Protection, SC−88
Features
Low RDS(on)
Low Gate Threshold
Low Input Capacitance
ESD Protected Gate
NVJD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
This is a Pb−Free Device
Applications
Low Side Load Switch
DC−DC Converters (Buck and Boost Circuits)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 85°C
t 5 s TA = 25°C
TA = 85°C
Steady TA = 25°C
State
VDSS
VGS
ID
PD
60 V
±20 V
300 mA
233
310
240
300 mW
t5s
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ, TSTG
319
1200
−55 to
175
mA
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS 250 mA
TL 260 °C
Gate−Source ESD Rating (HBM)
Gate−Source ESD Rating (MM)
ESDHBM
ESDMM
2000
200
V
V
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State
RqJA
500 °C/W
Junction−to−Ambient – t 5 s
RqJA
470
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
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V(BR)DSS
60 V
RDS(on) MAX
1.6 W @ 10 V
2.5 W @ 4.5 V
ID Max
300 mA
SC−88 (SOT−363)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
6
1
SC−88/SOT−363
CASE 419B
STYLE 26
VTF M G
G
1
S1 G1 D2
VTF = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NVJD5121NT1G SC−88 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 0
1
Publication Order Number:
NVJD5121N/D









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NVJD5121N Даташит, Описание, Даташиты
NVJD5121N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ
Temperature Coefficient
ID = 250 mA, ref to 25°C
92
V
mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
1.0 mA
500
±10 mA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.0
1.7
2.5 V
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
4.0 mV/°C
Drain−to−Source On Resistance
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
RDS(on)
gFS
RG
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 200 mA
VDS = 5 V, ID = 200 mA
1.0 1.6 W
1.2 2.5
80 S
536 W
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = 20 V
VGS = 4.5 V, VDS = 25 V,
ID = 200 mA
26 pF
4.4
2.5
0.9 nC
0.2
0.3
0.28
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDD = 25 V,
ID = 200 mA, RG = 25 W
22 ns
34
34
32
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 200 mA
TJ = 85°C
0.8 1.2 V
0.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
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NVJD5121N Даташит, Описание, Даташиты
NVJD5121N
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
1.6
5V
VGS = 10
4.5 V
1.2
4.2 V
2.4 V
0.8
2.2 V
0.4
TJ = 25°C
4V
3.8 V
3.6 V
3.4 V
3.2 V
3V
2.8 V
2.6 V
0
01234
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
5
2.4
2 TJ = 125°C
1.6 TJ = 85°C
1.2 TJ = 25°C
VGS = 4.5 V
0.8 TJ = −55°C
0.4
0
0
0.2 0.4 0.6 0.8
1
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
2.4
ID = 500 mA
2
1.6
1.2
ID = 200 mA
4.5 V
10 V
0.8
2
468
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance versus
Gate−to−Source Voltage
10
1.2
VDS 10 V
1
0.8
0.6
0.4
0.2
0
0
25°C
TJ = 125°C
−55°C
1234
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
2.4
2 VGS = 10 V
1.6
1.2
0.8
0.4
TJ = 125°C
TJ = 85°C
TJ = 25°C
TJ = −55°C
5
0
0
0.2 0.4 0.6 0.8
1
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Temperature
2.2
2.0
VGS = 10 V
ID = 0.5 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50 −25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. On−Resistance Variation with
Temperature
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