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6LP04MH PDF даташит

Спецификация 6LP04MH изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «P-Channel Silicon MOSFET».

Детали детали

Номер произв 6LP04MH
Описание P-Channel Silicon MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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6LP04MH Даташит, Описание, Даташиты
6LP04MH
Ordering number : ENA0457
6LP04MH
Features
1.5V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm20.8mm)
Ratings
--60
±10
--100
--400
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : QA
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--100µA
VDS=--10V, ID=--50mA
ID=--50mA, VGS=--4V
ID=--30mA, VGS=--2.5V
ID=--10mA, VGS=--1.5V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--60
--0.4
130
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--1.4 V
220 mS
6.5 8.5
7.4 11
10 20
15 pF
3.5 pF
1.0 pF
75 ns
116 ns
665 ns
270 ns
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
6LP04MH/D









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6LP04MH Даташит, Описание, Даташиты
6LP04MH
Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=--30V, VGS=--4V, ID=--100mA
VDS=--30V, VGS=--4V, ID=--100mA
VDS=--30V, VGS=--4V, ID=--100mA
IS=--100mA, VGS=0V
Ratings
min typ max
Unit
0.58
nC
0.14
nC
0.03
nC
--0.91
--1.5 V
Package Dimensions
unit : mm (typ)
7019A-003
2.0 0.15
3
0 to 0.02
12
0.65 0.3
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
Switching Time Test Circuit
0V VIN
--4V
VIN
PW=10µs
D.C.1%
VDD= --30V
ID= --50mA
RL=600
D VOUT
G
6LP04MH
P.G 50S
R=5k
ID -- VDS
--100
--90 --2.5V
--80
--70 VGS= --1.5V
--60
--50
--40
--30
--20
--10
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT11252
RDS(on) -- VGS
30
Ta=25°C
25
20
--30mA
15
--50mA
10
5 ID= --10mA
--150
VDS= --10V
ID -- VGS
--100
--50
0
0 --0.5 --1.0 --1.5 --2.0 --2.5
Gate-to-Source Voltage, VGS -- V IT11253
RDS(on) -- Ta
20
15
10
5
IIDDID===-----31-005mm0mAAA,, VV, VGGGSS==S=-----12-..455.VV0V
0
0 --2 --4 --6 --8 --10
Gate-to-Source Voltage, VGS -- V IT11254
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11255
Rev.0 I Page 2 of 4 I www.onsemi.com









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6LP04MH Даташит, Описание, Даташиты
6LP04MH
7
VDS= --10V
5
yfs-- ID
3
2
100
7
Ta=
--25°C
75°C
25°C
5
3
2
10
--1.0
3
2
23
5 7 --10 2 3 5 7 --100
Drain Current, ID -- mA
SW Time -- ID
23 5
IT11256
VDD= --30V
VGS= --4V
--100
7 VGS=0V
5
3
2
IS -- VSD
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
--0.2
3
2
--0.4
--0.6
--0.8
--1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
--1.2
IT11257
f=1MHz
Ciss
1000
7
5
3
2
td(off)
tf
100 tr
7
5
--0.001
23
--4.0
VDS= --30V
--3.5 ID= --100mA
td(on)
5 7 --0.01
23
Drain Current, ID -- A
VGS -- Qg
5 7 --0.1
IT11258
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
0.7
0.1 0.2 0.3 0.4 0.5 0.6
Total Gate Charge, Qg -- nC
PD -- Ta
IT11260
10
7
5 Coss
3
2
Crss
1.0
7
5
0 --5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT11259
ASO
7
5 IDP= --400mA
10µs
3
2
ID= --100mA
--0.1
7
5
3
2
DC
operation
100m10sm1sms
(Ta=25°C)
--0.01
7
5
Operation in this
area is limited by RDS(on).
3 Ta=25°C
2 Single pulse
--0.001 Mounted on a ceramic board (900mm20.8mm)
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100
Drain-to-Source Voltage, VDS -- V IT11261
0.6
0.5
0.4
0.3
0.2
0.1
Mounted on a ceramic board (900mm 20.8mm)
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11262
Rev.0 I Page 3 of 4 I www.onsemi.com










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