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PDF NCP1063 Data sheet ( Hoja de datos )
| Número de pieza | NCP1063 | |
| Descripción | High-Voltage Switcher | |
| Fabricantes | ON Semiconductor | |
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NCP1060, NCP1063
High-Voltage Switcher for
Low Power Offline SMPS
The NCP106X products integrate a fixed frequency current mode
controller with a 700 V MOSFET. Available in a PDIP−7, SOIC−10 or
SOIC−16 package, the NCP106X offer a high level of integration,
including soft−start, frequency−jittering, short−circuit protection,
skip−cycle, adjustable peak current set point, ramp compensation, and a
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Dynamic Self−Supply (eliminating the need for an auxiliary winding).
Unlike other monolithic solutions, the NCP106X is quiet by nature:
MARKING DIAGRAMS
during nominal load operation, the part switches at one of the available
7
frequencies (60 kHz or 100 kHz). When the output power demand
diminishes, the IC automatically enters frequency foldback mode and
provides excellent efficiency at light loads. When the power demand
reduces further, it enters into a skip mode to reduce the standby
8
1
PDIP−7
CASE 626A
AP SUFFIX
P106xfyyy
AWL
YYWWG
1
consumption down to a no load condition.
Protection features include: a timer to detect an overload or a
short−circuit event, Overvoltage Protection with auto−recovery and
AC input line voltage detection (A version).
The ON proprietary integrated Over Power Protection (OPP) lets
you harness the maximum delivered power without affecting your
standby performance simply via external resistors.
For improved standby performance, the connection of an auxiliary
winding stops the DSS operation and helps to reduce input power
consumption below 50 mW at high line.
NCP106x can be seamlessly used both in non−isolated and in
isolated topologies.
Features
• Built−in 700 V MOSFET with RDS(on) of 34 W (NCP1060) and
11.4 W (NCP1063)
• Large Creepage Distance Between High−voltage Pins
• Current−Mode Fixed Frequency Operation – 60 kHz or 100 kHz
(130 kHz on demand)
16
1
16
SOIC−16
CASE 751B−05
D SUFFIX
1
NCP1063fyyyG
AWLYWW
10
10
SOIC−10
CASE 751BQ
1060fyyy
ALYWX
1 AD or BD SUFFIX
G
1
x = Power Switch Circuit On−state Resistance
x = (0 = 34 W, 3 = 11.4 W)
f = Brown In (A = Yes, B = No)
yyy = Oscillator Frequency
yyy = (060 = 60 kHz, 100 = 100 kHz)
A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week
G or G = Pb−Free Package
• Adjustable Peak Current: see below table
• Fixed Ramp Compensation
ORDERING INFORMATION
• Direct Feedback Connection for Non−isolated Converter
• Internal and Adjustable Over Power Protection (OPP) Circuit
See detailed ordering and shipping information in the package
dimensions section on page 27 of this data sheet.
• Skip−Cycle Operation at Low Peak Currents Only
• Dynamic Self−Supply: No Need for an Auxiliary
• Frequency Foldback to Improve Efficiency at Light
Winding
Load
• Internal 4 ms Soft−Start
• These are Pb−Free Devices
• Auto−Recovery Output Short Circuit Protection with
Timer−Based Detection
• Auto−Recovery Overvoltage Protection with Auxiliary
Winding Operation
• Frequency Jittering for Better EMI Signature
• No Load Input Consumption < 50 mW
Typical Applications
• Auxiliary / Standby Isolated and Non−isolated Power
Supplies
• Power Meter SMPS
• Wide Vin Low Power Industrial SMPS
© Semiconductor Components Industries, LLC, 2015
December, 2015 − Rev. 1
1
Publication Order Number:
NCP1060/D
1 page  
NCP1060, NCP1063
Table 2. MAXIMUM RATING TABLE (All voltages related to GND terminal)
Rating
Symbol
Value
Unit
Power supply voltage, VCC pin, continuous voltage
Voltage on all pins, except Drain and VCC pin
Drain voltage
VCC
Vinmax
BVdss
−0.3 to 20
−0.3 to 10
−0.3 to 700
V
V
V
Maximum Current into VCC pin
Drain Current Peak during Transformer Saturation (TJ = 150°C, Note 2):
NCP1060
NCP1063
Drain Current Peak during Transformer Saturation (TJ = 125°C, Note 2):
NCP1060
NCP1063
Drain Current Peak during Transformer Saturation (TJ = 25°C, Note 2):
NCP1060
NCP1063
ICC
IDS(PK)
10
300
850
335
950
520
1500
mA
mA
Thermal Resistance Junction−to−Air – PDIP7 with 200 mm@ of 35−m copper area
Thermal Resistance Junction−to−Air – SOIC10 with 200 mm@ of 35−m copper area
Thermal Resistance Junction−to−Air – SOIC16 with 200 mm@ of 35−m copper area
Maximum Junction Temperature
Storage Temperature Range
RθJ−A
RθJ−A
RθJ−A
TJMAX
115
132
104
150
−60 to +150
°C/W
°C/W
°C/W
°C
°C
Human Body Model ESD Capability (All pins except HV pin) per JEDEC JESD22−A114F
HBM
2
kV
Charged−Device Model ESD Capability per JEDEC JESD22−C101E
CDM
1
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78.
2. Maximum drain current IDS(PK) is obtained when the transformer saturates. It should not be mixed with short pulses that can be seen at turn
on. Figure 5 below provides spike limits the device can tolerate.
Figure 5. Spike Limits
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5
5 Page 
NCP1060, NCP1063
TYPICAL CHARACTERISTICS
60.0
59.5
59.0
58.5
58.0
57.5
57.0
56.5
56.0
55.5
−40 −20 0 20 40 60 80 100
TEMPERATURE (°C)
Figure 18. fOSC60 vs. Temperature
120
100
99
98
97
96
95
94
93
92
−40 −20 0 20 40 60 80 100
TEMPERATURE (°C)
Figure 19. fOSC100 vs. Temperature
120
109
108
107
106
105
104
103
102
101
100
−40 −20
0 20 40 60 80
TEMPERATURE (°C)
100
Figure 20. Ifreeze1060 vs. Temperature
120
274
272
270
268
266
264
262
260
258
256
−40 −20
0 20 40 60 80
TEMPERATURE (°C)
100 120
Figure 21. Ifreeze1063 vs. Temperature
66.2
66.1
66.0
65.9
65.8
65.7
65.6
−40 −20
0
20 40 60 80 100
TEMPERATURE (°C)
Figure 22. D(max) vs. Temperature
120
25.8
25.6
25.4
25.2
25.0
24.8
24.6
24.4
−40 −20 0 20 40 60 80 100
TEMPERATURE (°C)
Figure 23. fmin vs. Temperature
120
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| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet NCP1063.PDF ] | |
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