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NCE0140K2 PDF даташит

Спецификация NCE0140K2 изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «NCE N-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв NCE0140K2
Описание NCE N-Channel Enhancement Mode Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE0140K2 Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE0140K2
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0140K2 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS = 100V,ID =40A
RDS(ON) < 17m@ VGS=10V
(Typ:14.5m)
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE0140K2
NCE0140K2
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
IDM
PD
-
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100
±20
40
28
160
140
0.94
520
-55 To 175
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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NCE0140K2 Даташит, Описание, Даташиты
http://www.ncepower.com
Pb Free Product
NCE0140K2
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.07 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
VGS=±20V,VDS=0V
100 110
--
--
-
1
±100
V
μA
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=28A
VDS=25V,ID=28A
23
- 14.5
32 -
4
17
-
V
m
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=30V,VGS=0V,
F=1.0MHz
- 3400
- 290
-
-
PF
PF
Crss
- 221
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V,ID=2A,RL=15,
RG=2.5,VGS=10V
ID=30A,VDD=30V,VGS=10V
-
-
-
-
-
-
-
15
11
52
13
94
16
24
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=28A
- 0.85 1.2
V
IS
--
40
A
trr
TJ = 25°C, IF = 28A
- 33
Qrr
di/dt = 100A/μs(Note3)
- 54
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
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NCE0140K2 Даташит, Описание, Даташиты
http://www.ncepower.com
Test Circuit
1EAS test Circuit
Pb Free Product
NCE0140K2
2Gate charge test Circuit
3Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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