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PDF NCE5520Q Data sheet ( Hoja de datos )
| Número de pieza | NCE5520Q | |
| Descripción | NCE N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | NCE Power Semiconductor | |
| Logotipo |  |
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http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE5520Q uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
Pb Free Product
NCE5520Q
General Features
● VDS =55V,ID =20A
RDS(ON) < 22mΩ @ VGS=10V
(Typ:19mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
Application
● Industrial power supplies
● LED backlighting
Schematic diagram
Pin assignment
DFN3X3 EP top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE5520Q
NCE5520Q
DFN3X3EP
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
55
±20
20
14
60
35
0.23
-55 To 150
Unit
V
V
A
A
A
W
W/℃
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
3.6 ℃/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
http://www.ncepower.com
Pb Free Product
NCE5520Q
Vds Drain-Source Voltage (V)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE5520Q.PDF ] | |
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