NDUL03N150C PDF даташит
Спецификация NDUL03N150C изготовлена «ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor». |
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Детали детали
Номер произв | NDUL03N150C |
Описание | N-Channel Power MOSFET / Transistor |
Производители | ON Semiconductor |
логотип |
5 Pages
No Preview Available ! |
Ordering number : ENA2218
NDUL03N150C
N-Channel Power MOSFET
1500V, 2.5A, 10.5Ω, TO-3PF-3L
http://onsemi.com
Features
• ON-resistance RDS(on)=8Ω (typ.)
• Input capacitance Ciss=650pF (typ.)
• 10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=50V, L=10mH, IAV=2.5A (Fig.1)
*2 L≤10mH, single pulse
Conditions
Limited only maximum temperature Tch=150°C
PW≤10μs, duty cycle≤1%
Tc=25°C
TO-3PF-3L
Ratings
1500
±30
2.5
5
3.0
50
150
--55 to +150
34
2.5
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=10mA, VGS=0V
VDS=1200V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=1.25A
ID=1.25A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=2.5A
IS=2.5A, VGS=0V
See Fig.3
IS=2.5A, VGS=0V, di/dt=100A/μs
min
1500
Ratings
typ
2
1.9
8
650
70
20
15
24
140
47
34
4.7
15
0.8
350
2220
max
1
±100
4
10.5
1.5
Unit
V
mA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
September, 2013
92513 TKIM TC-00003021/ No. A2218-1/5
No Preview Available ! |
NDUL03N150C
5.0
Tc=25°C
4.5
4.0
3.5
ID -- VDS
8V 10V
6V
3.0
2.5
5V
2.0
1.5
1.0
0.5 VGS=4V
0
0 10 20 30 40 50
DrainRtoDSSo(uorcne)Vo--ltagVeG, VSDS -- V IT17222
22
Single pulse
20 ID=1.25A
18
16
14
Tc=75°C
12
10
25°C
8
6 --25°C
4
2
0
0 2 4 6 8 10 12 14
10
Gate
to
Source
| yfs
V|ol-t-ageI,DVGS
--
V
IT17224
7 VDS=20V
5
3
2 25°C
1.0
7
Tc=
--25°C
75°C
5
3
2
0.1
0.01
1000
7
5
23
5 7 0.1 2 3 5 7 1.0
Drain
SW
Current,
Time
I-D-
-- A
ID
23
5 7 10
IT17226
VDD=200V
VGS=10V
3
2 td(off)
100
7
5
3
2
10
0.1
tf
tr
td(on)
23
5 7 1.0
23
Drain Current, ID -- A
5 7 10
IT17228
5.0 ID -- VGS
VDS=20V
4.5
4.0 Tc= --25°C
3.5
3.0 25°C
2.5
2.0 75°C
1.5
1.0
0.5
0
0 5 10 15
22
Gate
to Source Voltage,
RDS(on) --
VTcGS
--
V
Single pulse
20
18
16
14
12
10
V GS=10V, I D=1.25A
8
6
20
IT17249
4
2
0
--50 --25
10
7
5
3
2
0 25 50 75 100
Case Temperature, Tc -- °C
IS -- VSD
125 150
IT17225
Single pulse
VGS=0V
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
10000
7
5
3
2
1000
7
5
3
2
100
7
5
3
2
0.2 0.4 0.6 0.8 1.0 1.2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT17248
f=1MHz
Ciss
Coss
Crss
10 0 5 10 15 20 25 30 35 40 45 50
Drain to Source Voltage, VDS -- V IT17229
No. A2218-2/5
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NDUL03N150C
10
VDS=200V
9 ID=2.5A
8
VGS -- Qg
7
6
5
4
3
2
1
0
0 10 20 30
Total Gate Charge, Qg -- nC
3.5 PD -- Ta
40
IT17230
10
7 IDP=5A (PW≤10μs)
5
3 ID=2.5A
2
SOA
1.0
7
5
3
2
0.1 Operation in
7 this area is
5 limited by RDS(on).
3
2 Tc=25°C
0.01 Single pulse
0.1 2 3 5 71.0 2 3 5 7 10 2 3 5 7100 2 3 5 7 1K 2 3 5 710K
60
Drain
to
Source
PD
Voltage,
-- Tc
VDS
--
V
IT17231
3.0 50
2.5
40
2.0
30
1.5
20
1.0
0.5 10
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT17232
120 EAS -- Ta
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT17233
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Ambient Temperature, Ta -- °C
IT17234
No. A2218-3/5
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NDUL03N150C | N-Channel Power MOSFET / Transistor | ON Semiconductor |
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