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SCH1434 PDF даташит

Спецификация SCH1434 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв SCH1434
Описание N-Channel Power MOSFET / Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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SCH1434 Даташит, Описание, Даташиты
Ordering number : ENA1891A
SCH1434
N-Channel Power MOSFET
30V, 2A, 165mΩ, Single SCH6
http://onsemi.com
Features
1.8V drive
Halogen free compliance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
30
±12
2
8
0.8
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7028-002
1.6
0.2
654
SCH1434-TL-H
0.2
Product & Package Information
• Package
: SCH6
• JEITA, JEDEC
: SOT-563
• Minimum Packing Quantity : 5,000 pcs./reel
Packing Type : TL
Marking
ZK
1 23
0.5
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SCH6
TL
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/D1510PE TKIM TC-00002537 No. A1891-1/7









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SCH1434 Даташит, Описание, Даташиты
SCH1434
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4.5V
ID=0.5A, VGS=2.5V
ID=0.3A, VGS=1.8V
VDS=10V, f=1MHz
See specied Test Circuit.
VDS=10V, VGS=4.5V, ID=2A
IS=2A, VGS=0V
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10μs
D.C.1%
G
VDD=15V
ID=1A
RL=15Ω
D VOUT
P.G 50Ω S SCH1434
min
30
Ratings
typ
0.4
2.0
125
165
250
130
21
14
4.4
8.7
16
12
1.7
0.25
0.38
0.85
max
1
±10
1.3
165
235
375
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
SCH1434-TL-H
Package
SCH6
Shipping
5,000pcs./reel
memo
Pb Free and Halogen Free
No. A1891-2/7









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SCH1434 Даташит, Описание, Даташиты
SCH1434
2.0 ID -- VDS
1.8
1.6
1.4
1.2
1.0
1.5V
0.8
0.6
0.4
0.2 VGS=1.2V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
450 Drain-Rto-DSoSu(rocenV) ol-t-ageV, GVDSS -- V IT14137
Ta=25°C
400 ID=0.3A
0.5A
350
300 1A
250
200
150
100
50
0
0 1 2 3 4 5 6 7 8 9 10
5
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT14139
VDS=10V
3
2
1.0
7
Ta= --25°C75°C
5 25°C
3
2
0.1
7
0.01
23
7
VDD=15V
5 VGS=4.5V
5 7 0.1
2 3 5 7 1.0
Drain
SW
Current,
Time
I-D-
-- A
ID
23
IT14141
3
2 td(off)
10 tf
7 tr
5 td(on)
3
2
0.1
23
5 7 1.0
23
5 7 10
Drain Current, ID -- A
IT14143
2.0 ID -- VGS
VDS=10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 0.5 1.0 1.5 2.0 2.5
450
Gate-to-Source Voltage,
RDS(on) --
TVaGS
--
V
IT14138
400
350
300
250
VGS=1.8V, ID=0.3A
200
150
VVGGS=S2=.45.V5,VI,DI=D0=.51A.0A
100
50
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT14140
5 IS -- VSD
3 VGS=0V
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
7
5
0.2 0.4 0.6 0.8 1.0 1.2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT14142
f=1MHz
3
2
Ciss
100
7
5
3
2 Coss
Crss
10
7
5
0 5 10 15 20 25 30
Drain-to-Source Voltage, VDS -- V IT14144
No. A1891-3/7










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