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NCP81074B PDF даташит

Спецификация NCP81074B изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Single Channel 10A High Speed Low-Side MOSFET Driver».

Детали детали

Номер произв NCP81074B
Описание Single Channel 10A High Speed Low-Side MOSFET Driver
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NCP81074B Даташит, Описание, Даташиты
NCP81074A, NCP81074B
Single Channel 10A High
Speed Low-Side MOSFET
Driver
The NCP81074 is a single channel, low−side MOSFET driver. It is
capable of providing large peak currents into capacitive loads. This
driver can deliver a 7 A peak current at the Miller plateau region to
help reduce the Miller effect during MOSFETs switching transitions.
It exhibits a split output configuration allowing the user to control the
turn on and turn off slew rates. This part is available in SOIC−8 and
DFN8 2x2 mm packages.
Features
High Current Drive Capability ±10 A
TTL/CMOS Compatible Inputs Independent of Supply Voltage
High Reverse Current Capability (10 A) Peak
4 ns Typical Rise and 4 ns Typical Fall Times with 1.8 nF Load
Fast Propagation Delay Times of 15 ns with Input Falling and 15 ns
with Input Rising
Input Voltage Range from 4.5 V to 20 V
Split Output Configuration
Dual Input Design Offering Drive Flexibility
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Server Power
Telecommunication, Datacenter Power
Synchronous Rectifier
Switch Mode Power Supply
DC/DC Converter
Power Factor Correction
Motor Drive
Renewable Energy, Solar Inverter
www.onsemi.com
MARKING
DIAGRAMS
DFN8
MN SUFFIX
CASE 506AA
1
XXMG
G
1
XX = Specific Device Code
M = Date Code
G = Pb−Free Device
(Note: Microdot may be in either location)
8
1
SOIC−8
CASE 751
8
XXXXXX
AYWW
G
1
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 3
1
Publication Order Number:
NCP81074/D









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NCP81074B Даташит, Описание, Даташиты
NCP81074A, NCP81074B
ORDERING INFORMATION
Device
Temperature
Range (5C)
NCP81074AMNTBG
−40 to +140
Marking
CL
Input Type
Fixed Digital Threshold
Package Type
DFN8 2x2
(Pb−Free)
Shipping
3000 / Tape & Reel
NCP81074BMNTBG
−40 to +140
CM
VDD Based Threshold
DFN8 2x2
3000 / Tape & Reel
(Pb−Free)
NCP81074ADR2G
−40 to +140
NCP81074A
Fixed Digital Threshold
SOIC−8
(Pb−Free)
2500 / Tape & Reel
NCP81074BDR2G
−40 to +140
NCP81074B
VDD Based Threshold
SOIC−8
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BLOCK DIAGRAM
Figure 1. NCP81074 Block Diagram
www.onsemi.com
2









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NCP81074B Даташит, Описание, Даташиты
NCP81074A, NCP81074B
PIN DESCRIPTION
Pin No. Symbol
1 IN+
2 GND
3 GND
4 OUTL
5 OUTH
6 VDD
7 VDD
8 IN−
Description
Non−Inverting Input which has logic compatible threshold and hysteresis. If not used, this pin should be
connected to either VDD or GND. It should not be left unconnected.
Common ground. This ground should be connected very closely to the source of the power MOSFET.
Common ground. This ground should be connected very closely to the source of the power MOSFET.
Sink pin. Connect to Gate of MOSFET.
Source Pin. Connect to Gate of MOSFET.
Power Supply Input Pin.
Power supply Input Pin.
Inverting Input which has logic compatible threshold and hysteresis. If not used, this pin should be connect-
ed to either VDD or GND. It should not be left unconnected
Figure 2. TYPICAL APPLICATION CIRCUIT
ABSOLUTE MAXIMUM RATINGS
Value
Supply Voltage
Parameter
VDD
Min Max Unit
−0.3 24 V
Output Current (DC)
Iout_dc
0.6 A
Reverse Current (Pulse<1 ms)
10 A
Output Current (Pulse<0.5 ms)
Input Voltage
Iout_pulse
IN+, IN−
10
−6 24
A
V
Output Voltages
OUTH, OUTL
−0.3
VDD + 0.3
V
Output Voltages (Pulse<0.5 ms)
Junction Operation Temperature
Storage Temperature
Electrostatic Discharge
OUTH, OUTL
TJ
Tstg
Human body model, HBM
−3.0 VDD + 3.0
−40 150
−65 160
4000
V
°C
V
Charge device model, CDM
1000
OUT Latch−up Protection
500 mA
Moisture Sensitivity Level (MSL)
MSL1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com
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Номер в каталогеОписаниеПроизводители
NCP81074ASingle Channel 10A High Speed Low-Side MOSFET DriverON Semiconductor
ON Semiconductor
NCP81074BSingle Channel 10A High Speed Low-Side MOSFET DriverON Semiconductor
ON Semiconductor

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