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NLVVHC1GU04 PDF даташит

Спецификация NLVVHC1GU04 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Single Unbuffered Inverter».

Детали детали

Номер произв NLVVHC1GU04
Описание Single Unbuffered Inverter
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NLVVHC1GU04 Даташит, Описание, Даташиты
NLVVHC1GU04
Single Unbuffered Inverter
The NLVVHC1GU04 is an advanced high speed CMOS
Unbuffered inverter fabricated with silicon gate CMOS technology.
This device consists of a single unbuffered inverter. In combination
with others, or in the MC74VHCU04 Hex Unbuffered Inverter, these
devices are well suited for use as oscillators, pulse shapers, and in
many other applications requiring a high−input impedance amplifier.
For digital applications, the MC74VHC1G04 or the MC74VHC04 are
recommended.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The NLVVHC1GU04 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage. This
allows the NLVVHC1GU04 to be used to interface 5 V circuits to 3 V
circuits.
Features
High Speed: tPD = 2.5 ns (Typ) at VCC = 5 V
Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
Chip Complexity: FETs = 105
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
MARKING
DIAGRAMS
5
1
SC−88A / SOT−353 / SC−70
DF SUFFIX
CASE 419A
5
V6 M G
G
1
V6 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
PIN ASSIGNMENT
1 NC
2 IN A
3 GND
4 OUT Y
5 VCC
NC 1
IN A 2
5 VCC
FUNCTION TABLE
A Input
Y Output
LH
HL
GND 3
4 OUT Y
Figure 1. Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
IN A 1 OUT Y
Figure 2. Logic Symbol
© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 0
1
Publication Order Number:
NLVVHC1GU04/D









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NLVVHC1GU04 Даташит, Описание, Даташиты
NLVVHC1GU04
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
TSTG
TL
TJ
qJA
PD
MSL
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
Power Dissipation in Still Air at 85°C
Moisture Sensitivity
(Note 1)
*0.5 to )7.0
−0.5 to +7.0
*0.5 to VCC )0.5
−20
$20
$12.5
$25
*65 to )150
260
)150
350
150
Level 1
V
V
V
mA
mA
mA
mA
°C
°C
°C
°C/W
mW
FR
VESD
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
UL 94 V−0 @ 0.125 in
4000
400
N/A
V
ILATCHUP Latchup Performance
Above VCC and Below GND at 125°C (Note 5)
$500
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
VCC DC Supply Voltage
2.0 5.5 V
VIN DC Input Voltage
0.0 5.5 V
VOUT DC Output Voltage
0.0
VCC
V
TA Operating Temperature Range
*55
)125
°C
tr , tf Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
0
100 ns/V
20
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature 5C
Time, Hours
80 1,032,200
Time, Years
117.8
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
90
419,300
47.9
100 178,700 20.4
110 79,600
9.4
120 37,000
4.2
130 17,800
2.0
140 8,900
1.0
1
1 10
100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
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NLVVHC1GU04 Даташит, Описание, Даташиты
NLVVHC1GU04
DC ELECTRICAL CHARACTERISTICS
Symbol
VIH
Parameter
Minimum High−Level
Input Voltage
Test Conditions
VCC
TA = 25°C
TA 85°C −55 TA 125°C
(V) Min Typ Max Min Max Min
Max Unit
2.0 1.7
3.0 2.4
4.5 3.6
5.5 4.4
1.7 1.7
2.4 2.4
3.6 3.6
4.4 4.4
V
VIL Maximum Low−Level
Input Voltage
2.0
0.3 0.3
0.3 V
3.0
0.6 0.6
0.6
4.5
0.9 0.9
0.9
5.5
1.1 1.1
1.1
VOH
VOL
IIN
Minimum High−Level
Output Voltage
VIN = VIH or VIL
Maximum Low−Level
Output Voltage
VIN = VIH or VIL
Maximum Input
Leakage Current
VIN = VIH or VIL
IOH = −50 mA
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
VIN = VIH or VIL
IOL = 50 mA
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
VIN = 5.5 V or GND
2.0 1.9 2.0
3.0 2.9 3.0
4.5 4.4 4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
3.0 2.58
4.5 3.94
2.48 2.34
3.80 3.66
V
2.0 0.0 0.1 0.1
3.0 0.0 0.1 0.1
4.5 0.0 0.1 0.1
0.1 V
0.1
0.1
V
3.0
0.36 0.44
0.52
4.5
0.36 0.44
0.52
0 to
±0.1 ±1.0
±1.0 mA
5.5
ICC Maximum Quiescent VIN = VCC or GND
Supply Current
5.5
1.0 20
40 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS Input tr = tf = 3.0 ns
Symbol
tPLH,
tPHL
Parameter
Maximum Propagation
Delay, Input A to Y
Test Conditions
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
CIN Maximum Input
Capacitance
TA = 25°C
Min Typ Max
3.5 8.9
4.8 11.4
2.5 5.5
3.8 7.0
4 10
TA 85°C
Min Max
10.5
13.0
−55 TA 125°C
Min Max
12.0
15.5
Unit
ns
6.5 8.0
8.0 9.5
10 10 pF
Typical @ 25°C, VCC = 5.0V
CPD Power Dissipation Capacitance (Note 6)
22 pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.
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Номер в каталогеОписаниеПроизводители
NLVVHC1GU04Single Unbuffered InverterON Semiconductor
ON Semiconductor

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