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NTMFS6B05N PDF даташит

Спецификация NTMFS6B05N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTMFS6B05N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTMFS6B05N Даташит, Описание, Даташиты
NTMFS6B05N
Power MOSFET
100 V, 8 mW, 104 A, Single N−Channel
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 2, 3)
Power Dissipation
RqJC (Notes 1, 2)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
100
±20
104
66
138
56
16
10
3.3
1.3
370
−55 to
+ 150
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 50 A)
IS 130 A
EAS 125 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.9 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS
100 V
RDS(ON) MAX
8 mW @ 10 V
ID MAX
104 A
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 6B05N
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 1
1
Publication Order Number:
NTMFS6B05N/D









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NTMFS6B05N Даташит, Описание, Даташиты
NTMFS6B05N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
100
73
V
mV/°C
VGS = 0 V,
VDS = 80 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = 20 V
10
mA
100
100 nA
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V
VGS = 6.0 V
ID = 20 A
ID = 10 A
2.0 4.0 V
−7.9 mV/°C
6.5 8.0
mW
9.6 14
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS (Note 5)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
VGP
RG
VGS = 0 V, f = 1 MHz, VDS = 50 V
VGS = 10 V, VDS = 50 V; ID = 25 A
TJ = 25 °C
3100
570
28
44
5.0
14
12
5.0
1.0
pF
nC
V
W
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDS = 50 V,
ID = 25 A, RG = 1.0 W
14
43
ns
39
16
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 25 A
TJ = 125°C
0.9 1.2
0.8
V
Reverse Recovery Time
tRR
58
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 25 A
30 ns
28
Reverse Recovery Charge
QRR
83 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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NTMFS6B05N Даташит, Описание, Даташиты
NTMFS6B05N
TYPICAL CHARACTERISTICS
140
120
100
80
60
40
20
0
0
VGS = 10 V
7.0 V
6.5 V
6.0 V
5.5 V
4.0 V
5.0 V
4.5 V
0.5 1.0 1.5 2.0 2.5 3.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
140
120
100
80
60
40
20
0
0
VDS 10 V
TJ = 125°C
TJ = 25°C
TJ = −55°C
123 456
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
7
20
18 ID = 20 A
TJ = 25°C
16
14
12
10
8
6
4
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
VGS, GATE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
15
14 TJ = 25°C
13
12 VGS = 6.0 V
11
10
9
8
7 VGS = 10 V
6
5
4
10 15 20 25 30 35 40 45 50
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1.8
ID = 20 A
VGS = 10 V
1.6
1.4
100K
10K
1K
TJ = 150°C
TJ = 125°C
1.2
1.0 100
TJ = 25°C
0.8
10
0.6
0.4
−50 −25 0 25 50 75 100 125 150
1
10 20 30 40 50 60 70 80 90 100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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